The Drift Diffusion Equation and Its Applications in MOSFET Modeling /
The drift diffusion equation and its applications in MOSFET modeling will bridge the gap between phe-nomenological modeling and a rigorous microscopic approach. The five chapters cover: Wigner's and Boltzmann's equation, the relaxation time approximation and the hydro dynamic equations for...
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| Format: | eBook |
| Language: | English |
| Published: |
Vienna :
Springer Vienna,
1991.
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| Series: | Computational microelectronics.
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| Online Access: | Connect to the full text of this electronic book |
| Summary: | The drift diffusion equation and its applications in MOSFET modeling will bridge the gap between phe-nomenological modeling and a rigorous microscopic approach. The five chapters cover: Wigner's and Boltzmann's equation, the relaxation time approximation and the hydro dynamic equations for the case of strong non equilibrium, charge transport in an inversion channel, analytical approaches to determine the high energy distribution of carriers in high electric fields, and the spatial and temporal built up of charges in the gate oxide of a MOSFET device under electrical stress. |
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| Item Description: | Electronic resource. |
| Physical Description: | 1 online resource (xii, 271 pages 95 illustrations) |
| ISBN: | 9783709190951 (electronic bk.) 3709190959 (electronic bk.) |
| ISSN: | 0179-0307 |