Crystal Growth from the Melt /
The bulk single crystals of semiconductors (e.g. Si, GaAs) and oxides which are at present commercially produced have mostly non-uniform properties in the microscale (e.g. doping striations) and in the macroscale (longitudinal and lateral segregation). Such inhomogeneities are deleterious for the pe...
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| Format: | eBook |
| Language: | English |
| Published: |
Berlin, Heidelberg :
Springer Berlin Heidelberg,
1988.
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| Series: | Crystals ;
12. |
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| Online Access: | Connect to the full text of this electronic book |
Table of Contents:
- From the Contents: Fundamentals of the Process Modeling for Semiconductor Crystal Growth
- Macroscopic Inhomogeneity
- Avoidance of Macroscopic Inhomogeneity
- Microscopic Inhomogeneity
- Unsteady Buoyancy Convection as an Origin of Microinhomogeneity
- Measures to Avoid Convection Induced Microinhomogeneity
- Concluding Considerations for an Optimization of Crystal Growth Configurations.