rdf-syntax-grammar
mods:
  schema location: http://www.loc.gov/mods/v3 http://www.loc.gov/standards/mods/v3/mods-3-2.xsd
  title info:
    title: Crystal Growth from the Melt
  name:
    name part: Müller, G.
    role:
      role term: creator
  name:
    name part: SpringerLink (Online service)
  type of resource: text
  genre: Electronic books.
  origin info:
    place:
      place term: gw
    date issued: 1988
    issuance: monographic
  language:
    language term: eng
  physical description:
    form: remote
    extent: 1 online resource (VII, 138 pages 106 illustrations)
  abstract: The bulk single crystals of semiconductors (e.g. Si, GaAs) and oxides which are at present commercially produced have mostly non-uniform properties in the microscale (e.g. doping striations) and in the macroscale (longitudinal and lateral segregation). Such inhomogeneities are deleterious for the performance of the devices produced from these crystals. This book gives a review of the various origins of inhomogeneities occuring during crystal growth. It is shown that convection is the major source of the non-uniformities in the technically used growth configurations, e.g. Czochralski-, zone- and Bridgman-methods, because the growth rate is controlled by the heat transport. The formalism of hydrodynamics, especially dimensionless numbers, is used for a modeling of melt growth, giving a correlation between the occurrence of inhomogeneities and relevant growth parameters. The results of the theoretical and experimental modeling are found to correlate with results of real crystal growth, especially for cases of dominating buoyancy convection. Various measures in avoiding inhomogeneities are derived from the models and are discussed with respect to their efficiency and practical applicability.
  table of contents: From the Contents: Fundamentals of the Process Modeling for Semiconductor Crystal Growth -- Macroscopic Inhomogeneity -- Avoidance of Macroscopic Inhomogeneity -- Microscopic Inhomogeneity -- Unsteady Buoyancy Convection as an Origin of Microinhomogeneity -- Measures to Avoid Convection Induced Microinhomogeneity -- Concluding Considerations for an Optimization of Crystal Growth Configurations.
  note: by G. Müller.
  note: Electronic resource.
  subject:
    topic: Chemistry
  subject:
    topic: Chemistry, Inorganic
  subject:
    topic: Physical organic chemistry
  subject:
    topic: Chemical engineering
  subject:
    topic: Mineralogy
  subject:
    topic: Crystallography
  subject:
    topic: Chemical engineering
  subject:
    topic: Chemistry
  subject:
    topic: Chemistry, Inorganic
  subject:
    topic: Crystallography
  subject:
    topic: Mineralogy
  subject:
    topic: Physical organic chemistry
  classification: QD450-882
  classification: 541
  related item:
    title info:
      title: Crystals ; 12
  identifier: 9783642732089 (electronic bk.)
  identifier: 3642732089 (electronic bk.)
  identifier: http://proxy.library.tamu.edu/login
  record info:
    record content source: I9W
    record creation date: 121227
    record change date: 20260420210640.2
    record identifier: in00003543459
    language of cataloging:
      language term: eng