SiC power materials : devices and applications /

In the 1950s Shockley predicted that SiC would quickly replace Si as a result of its superior material properties. In many ways he was right and today there is an active industry based on SiC, with new achievements being reported every year. This book reviews the progress achieved in SiC research an...

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Bibliographic Details
Corporate Author: SpringerLink (Online service)
Other Authors: Feng, Zhe Chuan
Format: eBook
Language:English
Published: Berlin ; New York : Springer, [2004]
Series:Springer series in materials science ; v. 73.
Subjects:
Online Access:Connect to the full text of this electronic book
Description
Summary:In the 1950s Shockley predicted that SiC would quickly replace Si as a result of its superior material properties. In many ways he was right and today there is an active industry based on SiC, with new achievements being reported every year. This book reviews the progress achieved in SiC research and development, particularly over the past 10 years. It presents the essential properties of 3C-, 6H- and 4H-SiC polytypes including structural, electrical, optical, surface and interface properties; describes existing key SiC devices and also the challenges in materials growth and device fabrication of the 21st century. Overall it provides an up-to-date reference book suitable for a broad audience of newcomers, graduate students and engineers in industrial R & D.
Item Description:Electronic resource.
Physical Description:1 online resource (xix, 450 pages) : illustrations.
Bibliography:Includes bibliographical references and index.
ISBN:9783662098776 (electronic bk.)
3662098776 (electronic bk.)
ISSN:0933-033X ;