Cover Image

Characterization of 4H <000-1> silicon carbide films grown by solvent-laser heated floating zone /

Bibliographic Details
Main Author: Woodworth, Andrew A. (Author)
Corporate Author: United States. National Aeronautics and Space Administration (sponsoring body.)
Format: Government Document eBook
Language:English
Published: Cleveland, Ohio : National Aeronautics and Space Administration, Glenn Research Center, 2012.
Series:NASA technical memorandum ; 217708.
Subjects:
Silicon carbides.
Single crystals.
Crystal growth.
Laser heating.
X ray diffraction.
Diffraction patterns.
Online Access:https://purl.fdlp.gov/GPO/gpo51480
Description
Item Description:Title from title screen (viewed on Aug. 21, 2014).
"September 2012."
"Prepared for the 2012 Spring Meeting and Exhibit sponsored by the Materials Research Society, San Francisco, California, April 9-13, 2012."
Physical Description:1 online resource (6 pages) : illustrations.
Bibliography:Includes bibliographical references (page 6).