rdf-syntax-grammar
mods:
  schema location: http://www.loc.gov/mods/v3 http://www.loc.gov/standards/mods/v3/mods-3-2.xsd
  title info:
    title: Theory and Design of Smith-Purcell Semiconductor Terahertz Sources
  name:
    name part: Smith, Don DeeWayne
    role:
      role term: creator
    role:
      role term: author.
  name:
    name part: Belyanin, Alexey A.
    role:
      role term: thesis advisor.
  name:
    name part: Texas A & M University
    role:
      role term: degree granting institution.
  type of resource: text
  genre: bibliography
  origin info:
    place:
      place term: txu
    date issued: 2014
    issuance: monographic
  language:
    language term: eng
  physical description:
    form: remote
    extent: 1 online resource.
  abstract: A wealth of unique physics makes the frequency band from 0.3 - 3.0THz technologically relevant and compact room-temperature semiconductor sources would enable many new spectroscopic applications. All semiconductor sources currently have serious difficulties reaching the THz, and no THz device of any type operates on the full range at room temperature. This dissertation proposes a novel semiconductor source which utilizes the transferred-electron (Gunn) effect and the Smith-Purcell effect to operate over the majority of the 0.3 - 3.0THz band at room temperature. Mathematical derivations provide a theoretical analysis of the device and computer simulations explore its performance as a function of design. The dissertation begins with a description of the device and an overview of the field of terahertz science. A literature review establishes the relevance and uniqueness of the work and highlights the physical principles required to model the operation of the device. Next, the mathematical "machinery" required model the device is built, starting with a derivation of the Butcher-Fawcett "equal-areas" method used to calculate the Gunn effect. A description of the computer code written to implement the equal-areas method and examples validating its correct operation follow. A derivation of the Smith-Purcell effect provides a closed-form solution for the electric field, which is then combined with the Gunn effect results. With the theoretical methods thus established, a detailed explanation of the simulation methods used to model the device is provided, followed by a detailed comparison between theory and simulation - in which it is shown that the theoretical methods display a high degree of agreement with computer simulations of the device. The results of an extensive design study are then presented that map the range of predicted results for this terahertz device. The Smith-Purcell device is found to perform better than or comparable to any state-of-the-art semiconductor…
  note: by Don DeeWayne Smith.
  note: "Major Subject: Applied Physics"
  note: Includes vita.
  note: Doctor of Philosophy Texas A & M University 2013 http://hdl.handle.net/1969.1/151787
  note: Includes bibliographical references.
  note: Text (Dissertation)
  subject:
    topic: Major Applied Physics
  subject:
    topic: THz
  subject:
    topic: Smith-Purcell
  identifier: http://hdl.handle.net/1969.1/151787
  record info:
    record content source: TXA
    record creation date: 140627
    record change date: 20151206101914.0
    record identifier: in00003474109
    language of cataloging:
      language term: eng