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Modeling bipolar power semiconductor devices /

Bibliographic Details
Other Authors:	Gachovska, Tanya K.
Format:	eBook
Language:	English
Published:	[San Rafael, Calif.] : Morgan & Claypool, [2013]
Series:	Synthesis lectures on power electronics ; #5.
Subjects:	Power semiconductors > Mathematical models. Insulated gate bipolar transistors > Mathematical models. TECHNOLOGY & ENGINEERING / Electronics / Semiconductors. TECHNOLOGY & ENGINEERING / Electronics / Solid State. power semiconductor devices physics-based model Fourier series solution drift region carrier diffusion transient switching behavior
Online Access:	Connect to the full text of this electronic book

Table of Contents:

1. Introduction to power semiconductor device modeling
2. Physics of power semiconductor devices
2.1 On-state operation of bipolar devices
2.1.1 Lightly doped drift region
2.1.2 Depletion region
2.1.3 Emitter regions
2.1.4 Base or gate regions
2.1.5 N buffer layer region
2.1.6 MOS gate
2.2 Off state
3. Modeling of a power diode and IGBT
3.1 Modeling a power diode
3.1.1 P+ emitter region
3.1.2 N- drift region
3.1.3 N+ emitter region
3.1.4 Voltage drop
3.2 Modeling an NPT IGBT
3.2.1 P emitter region
3.2.2 N- drift region
3.2.3 MOS region
3.2.4 Voltage drop
4. IGBT under an inductive load-switching condition in Simulink
4.1 Electrical circuit in Simulink
4.2 Diode subsystem
4.3 NPT IGBT subsystem
5. Parameter extraction
5.1 Parameter estimation for power diodes
5.1.1 Area A
5.1.2 High-level injection lifetime HL
5.1.3 Drift region doping NN-
5.1.4 Drift region width WN-
5.1.5 Recombination parameters hn and hp
5.2 Parameter estimation for IGBTs
5.2.1 MOS parameters
5.2.2 IGBT geometry parameters
5.2.3 IGBT drift region parameters
5.2.4 IGBT lifetime parameters
5.2.5 IGBT recombination and buffer layer parameters
5.3 Initial circuit parameter estimation
References
Authors' biographies.