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00000cam a2200000 a 4500 |
| 001 |
in00002786628 |
| 005 |
20211120170330.0 |
| 006 |
m d f |
| 007 |
cr cn||||||||| |
| 008 |
120925s2012 coua ob f100 0deng c |
| 035 |
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|a (OCoLC)ocn811083404
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| 040 |
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|a SOE
|b eng
|c SOE
|d SOE
|d OCLCO
|d OCLCQ
|d OCLCO
|d GPO
|d MvI
|d UtOrBLW
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| 042 |
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|a pcc
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| 049 |
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|a WWW
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| 074 |
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|a 0430-P-04 (online)
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| 086 |
0 |
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|a E 9.17:NREL/CP-5200-54200
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| 245 |
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|a Understanding light-induced degradation of c-Si solar cells :
|b preprint /
|c Bhushan Sopori [and others].
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| 256 |
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|a Electronic data (1 PDF file : 458 Kb).
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| 264 |
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1 |
|a Golden, CO :
|b National Renewable Energy Laboratory,
|c [2012]
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| 300 |
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|a 1 online resource (6 pages) :
|b color illustrations
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| 336 |
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|a text
|b txt
|2 rdacontent
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| 337 |
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|a computer
|b c
|2 rdamedia
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| 338 |
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|a online resource
|b cr
|2 rdacarrier
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| 490 |
1 |
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|a Conference paper NREL/CP ;
|v 5200-54200
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| 538 |
|
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|a Full text available via Internet in .pdf format. Adobe Acrobat Reader required.
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| 500 |
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|a Title from title screen (viewed Sept. 25, 2012).
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| 500 |
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|a "June 2012."
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| 500 |
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|a "Presented at the 2012 IEEE Photovoltaic Specialists Conference Austin Texas June 3-8, 2012."
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| 504 |
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|a Includes bibliographical references (pages 5-6).
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|a We discuss results of our investigations toward understanding bulk and surface components of light-induced degradation (LID) in low-Fe c-Si solar cells. The bulk effects, arising from boron-oxygen defects, are determined by comparing degradation of cell parameters and their thermal recovery, with that of the minority-carrier lifetime (T) in sister wafers. We found that the recovery of T in wafers takes a much longer annealing time compared to that of the cell. We also show that cells having SiN:H coating experience a surface degradation (ascribed to surface recombination). The surface LID is seen as an increase in the q/2kT component of the dark saturation current (J02). The surface LID does not recover fully upon annealing and is attributed to degradation of the SiN:H-Si interface. This behavior is also exhibited by mc-Si cells that have very low oxygen content and do not show any bulk degradation.
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| 536 |
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|b DE-AC36-08GO28308
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| 500 |
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|a Electronic resource.
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| 650 |
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0 |
|a Photovoltaic cells.
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| 650 |
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|a Solar cells
|x Materials.
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| 650 |
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|a Silicon solar cells
|x Defects.
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| 700 |
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|a Sopori, Bhushan Lal.
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| 710 |
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|a National Renewable Energy Laboratory (U.S.)
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| 710 |
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|a MEMC Electronic Materials.
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| 710 |
2 |
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|a New Jersey Institute of Technology.
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| 711 |
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|a IEEE Photovoltaic Specialists Conference
|n (38th :
|d 2012 :
|c Austin, Tex.)
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| 830 |
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|a Conference paper (National Renewable Energy Laboratory (U.S.)) ;
|v 5200-54200.
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| 856 |
4 |
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|u https://purl.fdlp.gov/GPO/gpo30730
|t 0
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| 999 |
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|a MARS
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| 999 |
f |
f |
|s 2b794702-fb8b-3592-9009-5a08f1b5ec3d
|i c427643b-1f37-3b83-bbc1-fc0f6afd2557
|t 0
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| 952 |
f |
f |
|a Texas A&M University
|b College Station
|c Electronic Resources
|d Available Online
|t 0
|e E 9.17:NREL/CP-5200-54200
|h Superintendent of Documents classification
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| 998 |
f |
f |
|a E 9.17:NREL/CP-5200-54200
|t 0
|l Available Online
|