Understanding light-induced degradation of c-Si solar cells : preprint /

Bibliographic Details
Corporate Authors:	National Renewable Energy Laboratory (U.S.), MEMC Electronic Materials, New Jersey Institute of Technology, IEEE Photovoltaic Specialists Conference
Other Authors:	Sopori, Bhushan Lal
Format:	Government Document Conference Proceeding eBook
Language:	English
Published:	Golden, CO : National Renewable Energy Laboratory, [2012]
Series:	Conference paper (National Renewable Energy Laboratory (U.S.)) ; 5200-54200.
Subjects:	Photovoltaic cells. Solar cells > Materials. Silicon solar cells > Defects.
Online Access:	https://purl.fdlp.gov/GPO/gpo30730

Description
Abstract:	We discuss results of our investigations toward understanding bulk and surface components of light-induced degradation (LID) in low-Fe c-Si solar cells. The bulk effects, arising from boron-oxygen defects, are determined by comparing degradation of cell parameters and their thermal recovery, with that of the minority-carrier lifetime (T) in sister wafers. We found that the recovery of T in wafers takes a much longer annealing time compared to that of the cell. We also show that cells having SiN:H coating experience a surface degradation (ascribed to surface recombination). The surface LID is seen as an increase in the q/2kT component of the dark saturation current (J02). The surface LID does not recover fully upon annealing and is attributed to degradation of the SiN:H-Si interface. This behavior is also exhibited by mc-Si cells that have very low oxygen content and do not show any bulk degradation.
Item Description:	Title from title screen (viewed Sept. 25, 2012). "June 2012." "Presented at the 2012 IEEE Photovoltaic Specialists Conference Austin Texas June 3-8, 2012." Electronic resource.
Physical Description:	1 online resource (6 pages) : color illustrations
Format:	Full text available via Internet in .pdf format. Adobe Acrobat Reader required.
Bibliography:	Includes bibliographical references (pages 5-6).