rdf-syntax-grammar
mods:
  schema location: http://www.loc.gov/mods/v3 http://www.loc.gov/standards/mods/v3/mods-3-2.xsd
  title info:
    title: Design of shallow p-type dopants in ZnO
    sub title: preprint
  name:
    name part: Wei, Su-Huai.
    role:
      role term: creator
  name:
    name part: Li, Jian.
  name:
    name part: Yan, Yixun.
  name:
    name part: National Renewable Energy Laboratory (U.S.)
  type of resource: text
  genre: bibliography
  origin info:
    place:
      place term: cou
    date issued: 2008
    issuance: monographic
  language:
    language term: eng
  physical description:
    form: remote
    extent: 1 online resource (4 pages) : illustrations
  abstract: Due to the large electronegativity of the oxygen, the ionization energies of acceptors in metal oxides such as ZnO is quite high, making p-type doping a great challenge for the full utilization of ZnO as optoelectronic materials. By analyzing the defect wavefunction characters, we propose several approaches to lower the acceptor ionization energy in ZnO by codoping acceptors with donor or isovalent atoms. We also proposed a universal approach to overcome the doping polarity problem for wide-band-gap semiconductors. This approach can reduce the ionization energies of dopants and the spontaneous compensation from intrinsic defects by effective doping of impurity bands, which can be achieved by introducing passive donor-acceptor complexes or isovalent impurities. The approaches described here for ZnO can be easily extended to other transparent conducting oxides used for solar cell applications.
  note: S.H. Wei, J. Li, and Y. Yan.
  note: Title from title screen (viewed June 9, 2008).
  note: "May 2008."
  note: "Presented at the 33rd IEEE Photovoltaic Specialists Conference, San Diego, California, May 11-16, 2008."
  note: "The submitted manuscript has been offered by an employee of the Midwest Research Institute (MRI), a contractor of the US Government under Contract Number DE-AC36-99GO10337."
  note: Electronic resource.
  note: Conference paper; 11-16 May 2008.
  note: Includes bibliographical references (page 4).
  note: PVA72213
  subject:
    topic: Semiconductor doping
  subject:
    topic: Doped semiconductors
  subject:
    topic: Crystals
    topic: Defects
  classification: E 9.17:NREL/CP-590-42522
  related item:
    title info:
      title: Conference paper (National Renewable Energy Laboratory (U.S.)) ; 590-42522
  identifier: http://purl.fdlp.gov/GPO/gpo23721
  identifier: http://purl.fdlp.gov/GPO/gpo25721
  record info:
    record content source: SOE
    record creation date: 080609
    record change date: 20150922105141.0
    record identifier: in00002771369