Design of Shallow p-type Dopants in ZnO (Presentation) /

Bibliographic Details
Main Author:	Wei, Su-Huai
Corporate Authors:	United States. Department of Energy, National Renewable Energy Laboratory (U.S.), United States. Department of Energy. Office of Scientific and Technical Information, IEEE Photovoltaic Specialists Conference
Other Authors:	Yan, Y., Li, J.
Format:	Government Document Conference Proceeding eBook
Language:	English
Published:	Washington, D.C. : United States. Dept. of Energy ; 2008.
Series:	NREL/PR ; 520-43248.
Subjects:	Semiconductor doping. Doped semiconductors. Crystals > Defects.
Online Access:	https://purl.fdlp.gov/GPO/gpo24405

Description
Item Description:	Published through the Information Bridge: DOE Scientific and Technical Information. "May 2008.". Presented at the 33rd IEEE Photovoltaic Specialist Conference, 11-16 May 2008 in San Diego, California. National Renewable Energy Laboratory (NREL), Golden, CO. Electronic resource.
Physical Description:	1 online resource (32 pages) : color illustrations