rdf-syntax-grammar
mods:
  schema location: http://www.loc.gov/mods/v3 http://www.loc.gov/standards/mods/v3/mods-3-2.xsd
  title info:
    title: Nanocrystals embedded zirconium-doped hafnium oxide high-k gate dielectric films
  name:
    name part: Lin, Chen-Han.
    role:
      role term: creator
  name:
    name part: Kuo, Yue
    role:
      role term: thesis advisor.
  type of resource: text
  genre: bibliography
  origin info:
    place:
      place term: txu
    date issued: 2012
    issuance: monographic
  language:
    language term: eng
  physical description:
    form: remote
    extent: 1 online resource.
  abstract: Nanocrystals embedded zirconium-doped hafnium oxide (ZrHfO) high-k gate dielectric films have been studied for the applications of the future metal oxide semiconductor field effect transistor (MOSFET) and nonvolatile memory. ZrHfO has excellent gate dielectric properties and can be prepared into MOS structure with a low equivalent oxide thickness (EOT). Ruthenium (Ru) modification effects on the ZrHfO high-k MOS capacitor have been investigated. The bulk and interfacial properties changed with the inclusion of Ru nanoparticles. The permittivity of the ZrHfO film was increased while the energy depth of traps involved in the current transport was lowered. However, the barrier height of titanium nitride (TiN)/ZrHfO was not affected by the Ru nanoparticles. These results can be important to the novel metal gate/high-k/Si MOS structure. The Ru-modified ZrHfO gate dielectric film showed a large breakdown voltage and a long lifetime. The conventional polycrystalline Si (poly-Si) charge trapping layer can be replaced by the novel floating gate structure composed of discrete nanodots embedded in the high-k film. By replacing the SiO2 layer with the ZrHfO film, promising memory functions, e.g., low programming voltage and long charge retention time, can be expected. In this study, the ZrHfO high-k MOS capacitors that separately contain nanocrystalline ruthenium oxide (nc-RuO), indium tin oxide (nc-ITO), and zinc oxide (nc-ZnO) have been successfully fabricated by the sputtering deposition method followed with the rapid thermal annealing process. Material and electrical properties of these kinds of memory devices have been investigated using analysis tools such as XPS, XRD, and HRTEM; electrical characterizations such as C-V, J-V, CVS, and frequency-dependent measurements. All capacitors showed an obvious memory window contributed by the charge trapping effect. The formation of the interface at the nc-RuO/ZrHfO and nc-ITO/ZrHfO contact regions was confirmed by the XPS spectra.…
  note: by Chen-Han Lin.
  note: "Major Subject: Materials Science and Engineering"
  note: Electronic resource.
  note: Doctor of Philosophy Texas A&M University 2011 http://hdl.handle.net/1969.1/ETD-TAMU-2011-08-9884
  note: Includes bibliographical references.
  note: Text (Dissertation)
  subject:
    topic: Major Materials Science and Engineering
  subject:
    topic: MOSFET
  subject:
    topic: Hafnium Oxide
  subject:
    topic: Memory
  subject:
    topic: High-k
  subject:
    topic: Nonvolatile
  identifier: http://hdl.handle.net/1969.1/ETD-TAMU-2011-08-9884
  record info:
    record content source: TXA
    record creation date: 121119
    record change date: 20150922144135.0
    record identifier: in00002755748