rdf-syntax-grammar
mods:
  schema location: http://www.loc.gov/mods/v3 http://www.loc.gov/standards/mods/v3/mods-3-2.xsd
  title info:
    title: Silicon carbide
    part number: Volume 2
    part name: Power devices and sensors
  title info:
    title: Power devices and sensors
  name:
    name part: Friedrichs, Peter.
  type of resource: text
  genre: bibliography
  genre: Electronic books.
  origin info:
    place:
      place term: gw
    date issued: 2009
    issuance: monographic
  language:
    language term: eng
  physical description:
    form: remote
    extent: 1 online resource (xx, 500 pages)
  table of contents: View from Industry. Present Status and Future Prospects for Electronics in Electric Vehicles/Hybrid Electric Vehicles and Expectations for Wide-Bandgap Semiconductor Devices / Kimimori Hamada -- Silicon Carbide Power-Device Products - Status and Upcoming Challenges with a Special Attention to Traditional, Nonmilitary Industrial Applications / Peter Friedrichs -- Unipolar Devices Schottky Diodes. Effect of an Intermediate Graphite Layer on the Electronic Properties of Metal/SiC Contacts / Sergey A Reshanov, Konstantin V Emtsev, Florian Speck, Kun-Yuan Gao, Thomas K Seyller, Gerhard Pensl, Lothar Ley -- Reliability Aspects of SiC Schottky Diodes / Matthias Holz, Jochen Hilsenbeck, Roland Rupp -- JFET. Design, Process, and Performance of All-Epitaxial Normally-Off SiC JFETs / Rajesh K Malhan, Mietek Bakowski, Yuuichi Takeuchi, Naohiro Sugiyama, Adolf Schoner -- Extreme Temperature 6H-SiC JFET Integrated Circuit Technology / Philip G Neudeck, Steven L Garverick, David J Spry, Liang-Yu Chen, Glenn M Beheim, Michael J Krasowski, Mehran Mehregany -- 1200 V SiC Vertical-Channel-JFETs and Cascode Switches / Victor Veliadis -- MOS Interfaces. Alternative Techniques to Reduce Interface Traps in n-Type 4H-SiC MOS Capacitors / Gerhard Pensl, Svetlana Beljakowa, Thomas Frank, Kunyuan Gao, Florian Speck, Thomas Seyller, Lothar Ley, Florin Ciobanu, Valery Afanas'ev, Andre Stesmans, Tsunenobu Kimoto, Adolf Schoner -- High Electron Mobility Achieved in n-Channel 4H-SiC MOSFETs Oxidized in the Presence of Nitrogen / B Zippelius, S Beljakowa, M Krieger, G Pensl, S A Reshanov, M Noborio, T Kimoto, V V Afanas'ev -- 4H-SiC MISFETs with Nitrogen-Containing Insulators / Masato Noborio, Jun Suda, Svetlana Beljakowa, Michael Krieger, Tsunenobu Kimoto -- Inversion Layer Electron Transport in 4H-SiC Metal-Oxide-Semiconductor Field-Effect Transistors / Vinayak Tilak -- MOSFET and JFET Power Devices. Development of SiC Diodes, Power MOSFETs and Intelligent Power Modules / Takashi Nakamura, Mineo …
  note: edited by Peter Friedrichs[and others].
  note: Electronic resource.
  note: Includes bibliographical references and index.
  subject:
    topic: Silicon carbide
  classification: TK7871.15.S56 S55 2010 v.2eb
  classification: 621.3815/2
  related item:
    title info:
      title: Wiley online library
  identifier: 9783527629077 (electronic bk.)
  identifier: 3527629076 (electronic bk.)
  identifier: 10.1002/9783527629077 Wiley InterScience
  identifier: http://proxy.library.tamu.edu/login
  record info:
    record content source: DG1
    record creation date: 110407
    record change date: 20190329193958.0
    record identifier: in00002694499
    language of cataloging:
      language term: eng