http://www.loc.gov/mods/v3 http://www.loc.gov/standards/mods/v3/mods-3-2.xsd
View from Industry. Present Status and Future Prospects for Electronics in Electric Vehicles/Hybrid Electric Vehicles and Expectations for Wide-Bandgap Semiconductor Devices / Kimimori Hamada -- Silicon Carbide Power-Device Products - Status and Upcoming Challenges with a Special Attention to Traditional, Nonmilitary Industrial Applications / Peter Friedrichs -- Unipolar Devices Schottky Diodes. Effect of an Intermediate Graphite Layer on the Electronic Properties of Metal/SiC Contacts / Sergey A Reshanov, Konstantin V Emtsev, Florian Speck, Kun-Yuan Gao, Thomas K Seyller, Gerhard Pensl, Lothar Ley -- Reliability Aspects of SiC Schottky Diodes / Matthias Holz, Jochen Hilsenbeck, Roland Rupp -- JFET. Design, Process, and Performance of All-Epitaxial Normally-Off SiC JFETs / Rajesh K Malhan, Mietek Bakowski, Yuuichi Takeuchi, Naohiro Sugiyama, Adolf Schoner -- Extreme Temperature 6H-SiC JFET Integrated Circuit Technology / Philip G Neudeck, Steven L Garverick, David J Spry, Liang-Yu Chen, Glenn M Beheim, Michael J Krasowski, Mehran Mehregany -- 1200 V SiC Vertical-Channel-JFETs and Cascode Switches / Victor Veliadis -- MOS Interfaces. Alternative Techniques to Reduce Interface Traps in n-Type 4H-SiC MOS Capacitors / Gerhard Pensl, Svetlana Beljakowa, Thomas Frank, Kunyuan Gao, Florian Speck, Thomas Seyller, Lothar Ley, Florin Ciobanu, Valery Afanas'ev, Andre Stesmans, Tsunenobu Kimoto, Adolf Schoner -- High Electron Mobility Achieved in n-Channel 4H-SiC MOSFETs Oxidized in the Presence of Nitrogen / B Zippelius, S Beljakowa, M Krieger, G Pensl, S A Reshanov, M Noborio, T Kimoto, V V Afanas'ev -- 4H-SiC MISFETs with Nitrogen-Containing Insulators / Masato Noborio, Jun Suda, Svetlana Beljakowa, Michael Krieger, Tsunenobu Kimoto -- Inversion Layer Electron Transport in 4H-SiC Metal-Oxide-Semiconductor Field-Effect Transistors / Vinayak Tilak -- MOSFET and JFET Power Devices. Development of SiC Diodes, Power MOSFETs and Intelligent Power Modules / Takashi Nakamura, Mineo Miura, Noriaki Kawamoto, Yuki Nakano, Takukazu Otsuka, Keiji Oku-Mura, Akira Kamisawa -- Reliability Issues of SiC Power MOSFETs toward High Junction Temperature Operation / Satoshi Tanimoto, Hiromichi Ohashi -- Application of Silicon Carbide Transistors in Photovoltaic - Inverters / Dirk Kranzer, Bruno Burger -- Bipolar Devices. Design and Technology Considerations for SiC Bipolar Devices: BJTs, IGBTs, and GTOs / Qingchun (Jon) Zhang, Anant K Agarwal -- Suppressed Surface-Recombination Structure and Surface Passivation for Improving Current Gain of 4H-SiC BJTs / Kenichi Nonaka, Akihiko Horiuchi, Yuki Negoro, Kensuke Iwanaga, Seiichi Yokoyama, Hideki Hashimoto, Masashi Sato, Yusuke Maeyama, Masaaki Shimizu, Hiroaki Iwakuro -- SiC Avalanche Photodiodes and Photomultipliers for Ultraviolet and Solar-Blind Light Detection / Alexey Vert, Stanislav Soloviev, Peter Sandvik.
Includes bibliographical references and index.