Isotope generated electron density in silicon carbide direct energy converters /
SiC has been investigated for use as a direct energy converter (DEC) for nuclear batteries. A solid-state model is being developed to calculate the electrical output of a diode into a resistively loaded circuit. This paper describes the use of a nuclear scattering code (MCNPX) to calculate the incre...
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| Format: | Government Document eBook |
| Language: | English |
| Published: |
Adelphi, MD :
Army Research Laboratory,
[2006]
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| Edition: | [Draft]. |
| Series: | ARL-TR (Aberdeen Proving Ground, Md.) ;
3964. |
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| Online Access: | https://purl.fdlp.gov/GPO/gpo1957 |
| Summary: | SiC has been investigated for use as a direct energy converter (DEC) for nuclear batteries. A solid-state model is being developed to calculate the electrical output of a diode into a resistively loaded circuit. This paper describes the use of a nuclear scattering code (MCNPX) to calculate the increased electron density that would be expected in a SiC material based on exposure to a Sr90 beta emitter. An incident beta (average 125 keV) generates on the order of 27k free electrons/cc per incident Sr90 electron. For each incident electron, and average of 9 keV is deposited in the SiC. The results of this effort will be fed into the Schottky device numerical model to calculate the predicted power from the device. |
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| Item Description: | Title from PDF title screen (ARL, viewed Nov. 24, 2010). "October 2006." The original document contains color images. Electronic resource. |
| Physical Description: | 1 online resource (iv, 16 pages) : illustrations |
| Bibliography: | Includes bibliographical references. |
| Access: | APPROVED FOR PUBLIC RELEASE. |