Isotope generated electron density in silicon carbide direct energy converters /

SiC has been investigated for use as a direct energy converter (DEC) for nuclear batteries. A solid-state model is being developed to calculate the electrical output of a diode into a resistively loaded circuit. This paper describes the use of a nuclear scattering code (MCNPX) to calculate the incre...

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Bibliographic Details
Main Author: Litz, Mark
Corporate Author: U.S. Army Research Laboratory
Other Authors: Blaine, Kara
Format: Government Document eBook
Language:English
Published: Adelphi, MD : Army Research Laboratory, [2006]
Edition:[Draft].
Series:ARL-TR (Aberdeen Proving Ground, Md.) ; 3964.
Subjects:
Online Access:https://purl.fdlp.gov/GPO/gpo1957
Description
Summary:SiC has been investigated for use as a direct energy converter (DEC) for nuclear batteries. A solid-state model is being developed to calculate the electrical output of a diode into a resistively loaded circuit. This paper describes the use of a nuclear scattering code (MCNPX) to calculate the increased electron density that would be expected in a SiC material based on exposure to a Sr90 beta emitter. An incident beta (average 125 keV) generates on the order of 27k free electrons/cc per incident Sr90 electron. For each incident electron, and average of 9 keV is deposited in the SiC. The results of this effort will be fed into the Schottky device numerical model to calculate the predicted power from the device.
Item Description:Title from PDF title screen (ARL, viewed Nov. 24, 2010).
"October 2006."
The original document contains color images.
Electronic resource.
Physical Description:1 online resource (iv, 16 pages) : illustrations
Bibliography:Includes bibliographical references.
Access:APPROVED FOR PUBLIC RELEASE.