Nanoscale MOS transistors : semi-classical transport and applications /
"Written from an engineering standpoint, this book provides the theoretical background and physical insight needed to understand new and future developments in the modeling and design of n- and p-MOS nanoscale transistors. A wealth of applications, illustrations and examples connect the methods...
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| Format: | eBook |
| Language: | English |
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Cambridge ; New York :
Cambridge University Press,
2011.
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| Online Access: | Connect to the full text of this electronic book |
Table of Contents:
- Machine generated contents note: 1. Introduction; 2. Bulk semiconductors and the semi-classical model; 3. Quantum confined inversion layers; 4. Carrier scattering in silicon MOS transistors; 5. The Boltzmann transport equation; 6. The Monte Carlo method for the Boltzmann transport equation; 7. Simulation of bulk and SOI silicon MOSFETs; 8. MOS transistors with arbitrary crystal orientation; 9. MOS transistors with strained silicon channels; 10. MOS transistors with alternative materials; Appendix A. Mathematical definitions and properties; Appendix B. Integrals and transformations over a finite area A; Appendix C. Calculation of the equi-energy lines with the k-p model; Appendix D. Matrix elements beyond the envelope function approximation; Appendix E. Charge density produced by a perturbation potential.