http://www.loc.gov/mods/v3 http://www.loc.gov/standards/mods/v3/mods-3-2.xsd
Trap level spectroscopy in amorphous semiconductors
Although amorphous semiconductors have been studied for over four decades, many of their properties are not fully understood. This book discusses not only the most used spectroscopic techniques but also describes their advantages and disadvantages. Provides information on the most common spectroscopic techniques Discusses the advantages and disadvantages of each technique.
Thermally stimulated depolarization currents in amorphous chalcogenides -- Carrier transport processes in amorphous solids -- Time-of-flight experiments in amorphous chalcogenide semiconductors -- Xerographic spectroscopy of states in mobility gap -- Photoinduced effects on states in the mobility gap -- Spectroscopic studies of gap states and laser-induced structural transformations in se-based as-free amorphous semiconductors.
Electronic reproduction. Amsterdam : Elsevier Science & Technology, 2010. Mode of access: World Wide Web. System requirements: Web browser. Title from title screen (viewed on July 13, 2010). Access may be restricted to users at subscribing institutions.
1098708:10929071 Elsevier Science & Technology