Growth of low defect density gallium nitride (GaN) films on novel tantalum carbide (TaC) substrates for improved device performance /
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| Corporate Author: | |
| Format: | Government Document Book |
| Language: | English |
| Published: |
Adelphi, MD :
Army Research Laboratory,
[2009]
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| Series: | ARL-TR (Aberdeen Proving Ground, Md.) ;
4818. |
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| Online Access: | https://purl.fdlp.gov/GPO/LPS114293 |
| Item Description: | Title from title screen (viewed on July 6, 2009). "May 2009." Electronic resource. |
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| Physical Description: | vi, 26 pages : digital, PDF file. |
| Format: | Mode of access: Internet from the ARL web site. Address as of 7/6/09: http://www.arl.army.mil/arlreports/2009/ARL-TR-4818.pdf ; current access is available via PURL. |