http://www.loc.gov/mods/v3 http://www.loc.gov/standards/mods/v3/mods-3-2.xsd
Characterization of semiconductor heterostructures and nanostructures
ix, 486 pages, 3 unnumbered pages of plates : illustrations (some color) ; 25 cm.
Chapter 1. Introduction (C. Lamberti) -- Chapter 2. Ab-initio studies of structural and electronic properties (M. Peressi, A. Baldereschi and S. Baroni) -- Chapter 3. Electrical and optical properties of heterostructures (TBC) -- Chapter 4. Strain and composition determination in semiconducting heterostructures by high resolution X-ray diffraction (C. Ferrari and C. Bocchi) -- Chapter 5. Transmission Electron Microscopy techniques for imaging and composition evaluation in Semiconductor Heterostructures (L. Lazzarini, L. Nasi and V. Grillo) -- Chapter 6. Accessing structural and electronic properties of semiconductor nanostructures via photoluminescence (S. Sanguinetti, M. Guzzi and M. Gurioli) -- Chapter 7. Power dependent cathodoluminescence in III-Nitrides heterostructures: from internal field screening to controlled band gap modulation (G. Salviati, L. Lazzarini, N. Armani, F. Rossi and V. Grillo) -- Chapter 8. Raman Spectroscopy (D. Wolverson) -- Chapter 9. X-ray absorption fine structure spectroscopy (F. Boscherini) -- Chapter 10. Nanostructures in the light of synchrotron radiation: surface sensitive x-ray techniques and anomalous scattering (T. Metzger, J. Eymery, V. Favre-Nicolin, G. Renaud, H. Renevier and T. Schulli) -- Chapter 11. Grazing Incidence Diffraction Anomalous Fine Structure to study the structural properties of semiconductor nanostructures (M. Grazia Proietti, J. Coraux and H. Renevier) -- Chapter 12. The Role of Photoemission Spectroscopies in Heterojunction Research (G. Margaritondo) -- Chapter 13. EPR of interfaces and nanolayers in semiconductor heterostructures (A. Stesmans and V.V. Afans'ev).
Introduction: the interdisciplinary nature of nanotechnology and its need to exploit frontier characterization techniques / Carlo Lamberti -- Ab initio studies of structural and electronic properties / Maria Peressi, Alfonso Baldereschi, and Stefano Baroni -- Electrical characterization of nanostructures / Anna Cavallini and Laura Polenta -- Strain and composition determination in semiconducting heterostructures by high-resolution X-ray diffraction / Claudio Ferrari and Claudio Bocchi -- Transmission electron microscopy techniques for imaging and compositional evaluation in semiconductor heterostructures / Laura Lazzarini, Lucia Nasi, and Vincenzo Grillo -- Accessing structural and electronic properties of semiconductor nanostructures via photoluminescence / Stefano Sanguinetti, Mario Guzzi, and Massimo Gurioli -- Power-dependent cathodoluminescence in III-nitrides heterostructures: from internal field screening to controlled band-gap modulation / Giancarlo Salviati, Francesca Rossi, Nicola Armani, Vincenzo Grillo, and Laura Lazzarini -- Raman spectroscopy / Daniel Wolverson -- X-ray absorption fine structure in the study of semiconductor heterostructures and nanostructures / Federico Boscherini -- Nanostructures in the light of synchrotron radiation: surface-sensitive X-ray techniques and anomalous scattering / Till Metzger, Vincent Favre-Nicolin, Gilles Renaud, Hubert Renevier, and Tobias Schülli -- Grazing incidence diffraction anomalous fine structure in the study of structural properties of nanostructures / Maria Grazia Proietti, Johann Coraux, and Hubert Renevier -- The role of photoemission spectroscopies in heterojunction research / Giorgio Margaritondo -- ESR of interfaces and nanolayers in semiconductor heterostructures / Andre Stesmans and Valery V. Afanasʹev.
Electronic reproduction. Amsterdam : Elsevier Science & Technology, 2008. Mode of access: World Wide Web. System requirements: Web browser. Title from title screen (viewed on Nov. 14, 2008). Access may be restricted to users at subscribing institutions.
Includes bibliographical references and index.
137897:138034 Elsevier Science & Technology