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Band-bending effect of low-temperature GaAs on a pseudomorphic modulation-doped field-effect transistor /

Bibliographic Details
Corporate Author:	U.S. Army Research Laboratory
Other Authors:	Sun, W. D.
Format:	Government Document eBook
Language:	English
Published:	Adelphi, MD : Army Research Laboratory, [1999]
Series:	ARL-TR (Aberdeen Proving Ground, Md.) ; 1933.
Subjects:	Field-effect transistors. Quantum wells. Photoluminescence.
Online Access:	https://purl.fdlp.gov/GPO/LPS109421

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