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Band-bending effect of low-temperature GaAs on a pseudomorphic modulation-doped field-effect transistor /

Bibliographic Details
Corporate Author: U.S. Army Research Laboratory
Other Authors: Sun, W. D.
Format: Government Document eBook
Language:English
Published: Adelphi, MD : Army Research Laboratory, [1999]
Series:ARL-TR (Aberdeen Proving Ground, Md.) ; 1933.
Subjects:
Field-effect transistors.
Quantum wells.
Photoluminescence.
Online Access:https://purl.fdlp.gov/GPO/LPS109421
Description
Item Description:Title from title screen (viewed Feb. 26, 2009).
"May 1999."
Electronic resource.
Physical Description:iii, 13 pages : digital, PDF file.
Format:Mode of access: Internet from ARL web site. Address as of 2/26/2009: http://www.arl.army.mil/arlreports/1999/ARL-TR-1933.pdf ; current access via PURL.
Bibliography:Includes bibliographical references (page 7).