Novel high efficiency photovoltaic devices based on the III-N material system : final technical report, 7 December 2005 - 29 August 2008 /

Bibliographic Details
Main Author:	Honsberg, C. (Christiana B.)
Corporate Author:	National Renewable Energy Laboratory (U.S.)
Other Authors:	Doolittle, W. A. (W. Alan), Ferguson, Ian T.
Format:	Government Document eBook
Language:	English
Published:	Golden, Colo. : National Renewable Energy Laboratory, [2008]
Subjects:	Photovoltaic cells > Research. Solar cells > Design and construction.
Online Access:	https://purl.fdlp.gov/GPO/LPS108375

Description
Abstract:	The current work by University of Delaware researchers sought to understand InGaN as the potential material for photovoltaics. Phase separation was identified as a key loss mechanism. Phase-separated material (a lower bandgap) controls the open-circuit voltage, while the non-phase separated material (higher bandgap) controls the absorption. Phase separation in InGaN layers was controlled via optimization of growth conditions and device thickness.
Item Description:	Title from title screen (viewed October 21, 2008). "October 2008." Electronic resource.
Physical Description:	11 pages : digital, PDF file.
Format:	Mode of access: Internet from the NREL web site. Address as of 2/2/09: http://www.nrel.gov/docs/fy09osti/44186.pdf ; current access available via PURL.