Cover Image

GaAs high breakdown voltage front and back side processed Schottky detectors for x-ray detection /

Bibliographic Details
Corporate Author: U.S. Army Research Laboratory
Other Authors: Semendy, Fred
Format: Government Document eBook
Language:English
Published: Adelphi, MD : Army Research Laboratory, [2007]
Series:ARL-TR (Aberdeen Proving Ground, Md.) ; 4308.
Subjects:
Semiconductors.
Silicon carbide > Electric properties.
Gallium nitride > Electric properties.
Online Access:https://purl.fdlp.gov/GPO/LPS109772
Description
Item Description:Title from title screen (viewed March 5, 2009).
"November 2007."
Electronic resource.
Physical Description:iv, 13 pages : digital, PDF file.
Format:Mode of access: Internet from ARL web site. Address as of 3/05/2009: http://www.arl.army.mil/arlreports/2007/ARL-TR-4308.pdf ; current access via PURL.
Bibliography:Includes bibliographical references (pages 10-11).