rdf-syntax-grammar
mods:
  schema location: http://www.loc.gov/mods/v3 http://www.loc.gov/standards/mods/v3/mods-3-2.xsd
  title info:
    title: Single crystal growth of semiconductors from metallic solutions
  name:
    name part: Dost, Sadik.
    role:
      role term: creator
  name:
    name part: Lent, Brian.
  name:
    name part: ScienceDirect (Online service)
  type of resource: text
  genre: bibliography
  genre: Electronic books.
  origin info:
    place:
      place term: ne
    date issued: 2007
    edition: 1st ed.
    issuance: monographic
  language:
    language term: eng
  physical description:
    form: electronic
    form: remote
    extent: x, 493 pages : illustrations ; 25 cm.
  abstract: Single Crystal Growth of Semiconductors from Metallic Solutions covers the four principal growth techniques currently in use for the growth of semiconductor single crystals from metallic solutions. Providing an in-depth review of the state-of-the-art of each, both experimentally and by numerical simulations. The importance of a close interaction between the numerical and experimental aspects of the processes is also emphasized. Advances in the fields of electronics and opto-electronics are hampered by the limited number of substrate materials which can be readily produced by melt-growth techniques such as the Czochralski and Bridgman methods. This can be alleviated by the use of alternative growth techniques, and in particular, growth from metallic solutions. The principal techniques currently in use are: Liquid Phase Epitaxy; Liquid Phase Electroepitaxy; the Travelling Heater Method, and; Liquid Phase Diffusion. Single Crystal Growth of Semiconductors from Metallic Solutions will serve as a valuable reference tool for researchers, and graduate and senior undergraduate students in the field of crystal growth. It covers most of the models developed in recent years. The detailed development of basic and constitutive equations and the associated interface and boundary conditions given for each technique will be very valuable to researchers for the development of their new models. * Describes the fundamentals of crystal growth modelling * Providing a state-of-the art description of the mathematical and experimental growth processes * Allows reader to gain clear insight into the practical and mathematical aspects of the topic.
  table of contents: Preface -- PART I: Fundamentals -- Chapter 1: Introduction -- Chapter 2: Fundamentals and Phase Changes -- Chapter 3: Metallic Solution Growth Techniques -- Chapter 4: Crystal Growth Modeling -- PART II: Numerical Simulations -- Chapter 5: Liquid Phase Epitaxy -- Chapter 6: Liquid Phase Electroepitaxy -- Chapter 7: Travelling Heater Method -- Chapter 8: Liquid Phase Diffusion -- Bibliography.
  note: Sadik Dost and Brian Lent.
  note: Electronic resource.
  note: Electronic reproduction. Amsterdam : Elsevier Science & Technology, 2007. Mode of access: World Wide Web. System requirements: Web browser. Title from title screen (viewed on July 25, 2007). Access may be restricted to users at subscribing institutions.
  note: Includes bibliographical references.
  subject:
    topic: Semiconductors
  subject:
    topic: Crystal growth
  classification: TK7871.85 .D69 2007eb
  classification: 621.3815/2
  related item:
    identifier: (DLC) 2006050298
    identifier: (OCoLC)70844463
  identifier: 9780444522320
  identifier: 0444522328
  identifier: 114753:114847 Elsevier Science & Technology
  identifier: http://proxy.library.tamu.edu/login
  identifier: http://www.loc.gov/catdir/enhancements/fy0665/2006050298-d.html
  related item:
    location:
      url: http://www.loc.gov/catdir/enhancements/fy0665/2006050298-d.html
  record info:
    record content source: OPELS
    record creation date: 070802
    record change date: 20260609193405.7
    record identifier: in00002429613