Si passivation and chemical vapor deposition of silicon nitride : final technical report, March 18, 2007 /

Bibliographic Details
Main Author:	Atwater, H. A.
Corporate Authors:	California Institute of Technology, National Renewable Energy Laboratory (U.S.)
Format:	Government Document eBook
Language:	English
Published:	Golden, Colo. : National Renewable Energy Laboratory, [2007]
Series:	NREL/SR ; 520-42325.
Subjects:	Polycrystalline semiconductors > Research. Silicon. Thin films. Photovoltaic cells > Research.
Online Access:	https://purl.fdlp.gov/GPO/LPS92264

Description
Abstract:	This report investigated chemical and physical methods for Si surface passivation for application in crystalline Si and thin Si film photovoltaic devices. Overall, our efforts during the project were focused in three areas: i) synthesis of silicon nitride thin films with high hydrogen content by hot-wire chemical vapor deposition; ii) investigation of the role of hydrogen passivation of defects in crystalline Si and Si solar cells by out diffusion from hydrogenated silicon nitride films; iii) investigation of the growth kinetics and passivation of hydrogenated polycrystalline. Silicon nitride films were grown by hot-wire chemical vapor deposition and film properties have been characterized as a function of SiH₄/NH₃ flow ratio. It was demonstrated that hot-wire chemical vapor deposition leads to growth of SiNx films with controllable stoichiometry and hydrogen.
Item Description:	Title from title screen (viewed Mar. 20, 2008). "November 2007." Electronic resource.
Physical Description:	iv, 33 pages : digital, PDF file.
Format:	Mode of access: Internet from the National Renewable Energy Laboratory web site. Address as of 3/20/08: http://www.nrel.gov/docs/fy08osti/42325.pdf ; current access available via PURL. Full text available via Internet in .pdf format. Adobe Acrobat Reader required.