| Tag |
First Indicator |
Second Indicator |
Subfields |
| LEADER |
00000cam a2200000Ia 4500 |
| 001 |
in00002035813 |
| 005 |
20151101051008.0 |
| 008 |
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| 010 |
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|a 2004105869
|
| 016 |
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|
|a 970038836
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| 020 |
|
|
|a 3540210814 (hbk.)
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| 024 |
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| 090 |
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|
|a TK7874
|b .H52414 2005
|
| 245 |
0 |
0 |
|a High dielectric constant materials :
|b VLSI MOSFET applications /
|c H.R. Huff, D.C. Gilmer (eds.).
|
| 246 |
3 |
0 |
|a VLSI MOSFET applications
|
| 264 |
|
1 |
|a Berlin ;
|a New York :
|b Springer,
|c 2005.
|
| 300 |
|
|
|a xxiv, 710 pages :
|b illustrations ;
|c 25 cm.
|
| 336 |
|
|
|a text
|b txt
|2 rdacontent
|
| 337 |
|
|
|a unmediated
|b n
|2 rdamedia
|
| 338 |
|
|
|a volume
|b nc
|2 rdacarrier
|
| 490 |
1 |
|
|a Springer series in advanced microelectronics,
|x 1437-0387 ;
|v 16
|
| 504 |
|
|
|a Includes bibliographical references and index.
|
| 650 |
|
0 |
|a Integrated circuits
|x Very large scale integration
|x Materials.
|
| 650 |
|
0 |
|a Semiconductors
|x Materials.
|
| 650 |
|
0 |
|a Metal oxide semiconductor field-effect transistors
|x Materials.
|
| 650 |
|
0 |
|a Gate array circuits
|x Materials
|v Congresses.
|
| 650 |
|
0 |
|a Dielectrics.
|
| 700 |
1 |
|
|a Huff, Howard R.
|
| 700 |
1 |
|
|a Gilmer, D. C.
|q (David C.)
|
| 830 |
|
0 |
|a Springer series in advanced microelectronics ;
|v 16.
|
| 938 |
|
|
|a Otto Harrassowitz
|b HARR
|n har040024826
|c 160.45 EUR
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| 994 |
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|a E0
|b TXA
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|a cataloged
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|c 2005/3/22
|d c
|e jlanham
|f 8:45:05 am
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| 944 |
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|h FREQ_RECALL<wvanduin>
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|h Library of Congress classification
|i unmediated -- volume
|m A14836031256
|
| 998 |
f |
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|a TK7874 .H52414 2005
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