rdf-syntax-grammar
mods:
  schema location: http://www.loc.gov/mods/v3 http://www.loc.gov/standards/mods/v3/mods-3-2.xsd
  title info:
    title: Study of plasma enhanced chemical vapor deposition of boron-doped hydrogenated amorphous silicon thin films and the application to p-channel thin film transistor
  name:
    name part: Nominanda, Helinda
    name part: 1979-
    role:
      role term: creator
  type of resource: text
  genre: bibliography
  origin info:
    place:
      place term: xx
    date issued: 2003
    issuance: monographic
  language:
    language term: eng
  physical description:
    form: print
    form: remote
    extent: xi, 89 leaves : illustrations ; 28 cm.
  abstract: The material and process characteristics of boron doped hydrogenated amorphous silicon (a-Si:H) thin film deposited by plasma enhanced chemical vapor deposition technique (PECVD) have been studied. The goal is to apply the high quality films deposited at low substrate temperature for devices such as thin film transistors (TFTs). The effect of the deposition parameters such as doping gas concentration, substrate temperature, hydrogen dilution, helium dilution, power density, and pressure at 50 kHz rf frequency on the films' characteristics were analyzed. The films' electrical property was characterized by its dark resistivity. The chemical composition and bonding characteristics were discussed. p-channel TFTs were fabricated with these optimized films. Three different levels of dopant concentrations in the channel were used to detect the dopant effect on the TFT properties. Doping resulted in the increase of film deposition rate. The low film deposition rate at the high temperature deposition corresponds to a dense structured film. The increase of gas phase H₂ concentration could increase H₂ etching of the weak bonds in the film, which is consistent with the decrease of the deposition rate. Film's dark conductivity is determined by the atomic B concentration in the film, the substrate temperature, the ion bombardment effect, the surface morphology, and the gas phase and film hydrogen concentration. At high power density and high pressure plasma condition, film with a high deposition rate shows a high conductivity. However, excessive ion bombardment effect, e.g. in powdery plasma region, limits the further increase of the conductivity. Film deposited with He dilution demonstrates a higher conductivity compared to the H₂ dilution counterpart. This might be attributed to a more effective ion bombardment effect of the former. Powder generation in the plasma significantly affects the conductivity of He diluted film compared to the H₂ diluted ones, which might be due to th…
  note: by Helinda Nominanda.
  note: "Major subject: Chemical Engineering".
  note: Vita.
  note: Also available online.
  note: Issued also on microfiche from Lange Micrographics.
  note: M.S. Texas A&M University 2004
  note: Includes bibliographical references (leaves 81-88).
  subject:
    topic: Major chemical engineering
  identifier: https://hdl.handle.net/1969.1/ETD-TAMU-2004-THESIS-N66
  related item:
    location:
      url: https://hdl.handle.net/1969.1/ETD-TAMU-2004-THESIS-N66
  record info:
    record content source: TXA
    record creation date: 041011
    record change date: 20220103134513.0
    record identifier: in00001997373