Theoretical analysis on thin oxide film formation at high temperature /

In this thesis, we will develop several models based on the first principle equations. We will also present the result of our theoretical predictions on oxide film formation. We begin with the thick SiO₂ film formation under diffusional control and instantaneous reaction assumptions. This model is c...

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Bibliographic Details
Main Author: Peng, Kuang-Yao, 1967-
Format: Thesis Book
Language:English
Published: [Place of publication not identified] : [publisher not identified] ; 1999.
Subjects:
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Description
Summary:In this thesis, we will develop several models based on the first principle equations. We will also present the result of our theoretical predictions on oxide film formation. We begin with the thick SiO₂ film formation under diffusional control and instantaneous reaction assumptions. This model is compared with the conventional Deal and Grove (1965) model under the condition of elevated temperature. Our result showed that our parabolic model is better than the linear-parabolic model proposed by Deal and Grove (1965) in most cases. To extend our ideas to wet oxidation and ultra thin film oxide formation, we used slow reaction mechanisms and perturbation solution to explain the errors in Deal and Grove (1965) model for the thin film formation. We further proposed an analysis including long range force effect and initial concentration effect. This new analysis can accurately predict the ultra thin film formation for film thickness around 50 []. For an nonstoichiometric Iron oxide, we simplify the complicate ternary diffusion problem with the assumption of local electric neutrality. The only information needed for this model is a phase diagram.
Item Description:Vita.
"Major Subject: Chemical Engineering".
Physical Description:xiii, 103 leaves : illustrations ; 28 cm.
Issued also on microfiche from University Microfilm Inc.
Bibliography:Includes bibliographical references (leaves 93-98).