http://www.loc.gov/mods/v3 http://www.loc.gov/standards/mods/v3/mods-3-2.xsd
Optimal burn-in strategy of gate oxide based on yield and reliability
xiii, 156 leaves : illustrations ; 28 cm.
Yield and reliability are two very important factors rofilm Inc. that affect the success of the semiconductor manufacturing industry. The relationship between yield and reliability can be mathematically modeled in order to project gate oxide reliability of transistors in the ICs. This yield-reliability relation model provides the minimum fault coverage to guarantee the required reliability while the yield increases. Fault coverage is an- other factor affecting the reliability and quality of semiconductor devices. When the yield prediction model is combined with the relation model, it is possible to predict the reliability of new products. The yield loss and gain due to burn-in can be calculated based on the relation model. The defect growth during burn-in time results in yield loss, and the reduced defect density provides chance of some yield gain. The burn-in effect on yield is related to burn-in decision making. When burn-in is applied to devices, the burn-in level, time, and the coverage must be determined. The cost function and reliability are derived from integrating two approaches. One approach is based on empirical gate oxide breakdown time distribution which is the competing Weibull distribution, and the other approach is based on the relation model. The burn-in policies considered are the no burn-in, wafer level burn-in (WLBI), package level burn-in (PLBI), WLBI prior to PLBI. Through burn-in optimization, optimal burn-in times of WLBI and PLBI and burn-in coverage are obtained.
"Major Subject: Industrial Engineering".
Includes bibliographical references (leaves 137-151).