Gallium interactions with Zircaloy /
[] Ga ions/[]. After implantation of [] Ga ions/[],
| Main Author: | |
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| Format: | Thesis eBook |
| Language: | English |
| Published: |
[Place of publication not identified] :
[publisher not identified] ;
1998.
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| Subjects: | |
| Online Access: | Link to OAKTrust copy |
| Summary: | [] Ga ions/[]. After implantation of [] Ga ions/[], backscattering and SIMS techniques. Results indicate between 30 and 40 atomic %; significant enhanced between Ga and Zr. For the highest fluency implant, concentrate at grain boundaries. diffusion was observed but gallium was not seen to Ga content in the Zirc-4 reached a saturation value of High fluence ion implantation of Ga ions was conducted ics. microphone analysis. The depth profile of Ga in the on heated Zircaloy-4 in the range of [] Ga ions/[]. sub-grain features on the order of 2 gm were observed Surface effects were studied using SEM and electron that the Zirc-4 is little affected up to a fluency of which may be due to intermetallic compound formation Zircaloy was characterized with Rutherford |
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| Item Description: | "Major subject: Nuclear Engineering". Vita. |
| Physical Description: | x, 62 leaves : illustrations ; 28 cm. Also available online. |
| Bibliography: | Includes bibliographical references (leaves 46-47). |