Fundamentals of III-V devices : HBTs, MESFETs, and HFETs/HEMTs /

Bibliographic Details
Main Author:	Liu, William
Format:	Book
Language:	English
Published:	New York : Wiley & Sons, [1999]
Subjects:	Bipolar transistors. Field-effect transistors. Metal semiconductor field-effect transistors. Modulation-doped field-effect transistors.

Description
Item Description:	"A Wiley-Interscience publication." III-V transistors, such as heterojunction bipolar transistors HBT, metal-semiconductor field-effect transistors (MESFETs) and heterojunction field-effect transistors (HFETs), which include high electron mobility transistors (HEMTs), extend the advantages of silicon counterparts to signifiantly higher frequencies--preface: p.xi.
Physical Description:	xii, 505 pages : illustrations ; 25 cm.
Bibliography:	Includes bibliographical references and index.
ISBN:	0471297003 (cloth : alk. paper)