Growth and characterization of Barium Strontium Titanate thin films by Metal Organic Decomposition /
Barium Strontium Titanate (Ba,,Sr,,TiO3) - BST, has been identified to be an important material for application in charge storage (capacitors and DRAM) because of its high dielectric constant and low leakage current. Metal Organic Decomposition (MOD) is a simple process for the growth of thin films...
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| Format: | Thesis Book |
| Language: | English |
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[Place of publication not identified] :
[publisher not identified] ;
1998.
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| Subjects: | |
| Online Access: | http://proxy.library.tamu.edu/login?url=http://proquest.umi.com/pqdweb?did=737708361&sid=1&Fmt=2&clientId=2945&RQT=309&VName=PQD |
| Summary: | Barium Strontium Titanate (Ba,,Sr,,TiO3) - BST, has been identified to be an important material for application in charge storage (capacitors and DRAM) because of its high dielectric constant and low leakage current. Metal Organic Decomposition (MOD) is a simple process for the growth of thin films with fast processing, ease of deposition and low investment. Individual organometallic precursors are first mixed together in required stoichiometric ratios to obtain a solution that is deposited on the substrate. It is then heated to pyrolyze the organic solvents. Multiple layers are deposited to achieve the required thickness and a final anneal is performed for crystallization. The present study involves the deposition of thin films of BST (x =0.35) from acetate precursors on platinized silicon substrates by MOD spin-on process and characterization for their phase, composition, morphological and electrical properties with the aid of XRD, EDS, WDS, SEM, AFM and electronic instrumentation, as functions of thickness, temperature and frequency. The growth parameters are optimized and are correlated to the physical and electrical properties. |
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| Item Description: | Vita. "Major Subject: Electrical Engineering". |
| Physical Description: | xi, 94 leaves : illustrations ; 28 cm. Issued also on microfiche from University Microfilms Inc. |
| Bibliography: | Includes bibliographical references: pages 83-88. |