Cover Image

MAM '97, abstracts booklet : European Workshop: Materials for Advanced Metallization, Villard-de-Lans, France, March 16-19, 1997.

Bibliographic Details
Corporate Authors: European Workshop: Materials for Advanced Metallization Villard-de-Lans, France, International Union for Vacuum Science, Technique and Applications, France. Ministère de l'éducation nationale, de l'enseignement supérieur, de la recherche et de l'insertion professionnelle, IEEE Electron Devices Society
Format: Conference Proceeding Book
Language:English
Published: Paris, France : Société française du vide, 1997.
Subjects:
Integrated circuits > Very large scale integration > Design and construction > Congresses.
Metallizing > Congresses.
Semiconductor-metal boundaries > Congresses.
Métallisation > Congrès.
Contacts métal-semiconducteur > Congrès.
Integrated circuits > Very large scale integration > Design and construction.
Metallizing.
Semiconductor-metal boundaries.
Conference papers and proceedings.
Online Access:IEEE Xplore
Table of Contents:
  • High aspect ration quarter-micron electroless copper integrated technology / Y. Shacham-Diamand and S. Lopatin
  • CVD process for copper interconnection / C. Marcadal, E. Richard and J. Torres
  • Copper metallization for advanced ULSI devices using spray electroless plating technology / V. Nguyen
  • Conformal copper deposition in deep trenches / D. Bollmann, R. Merkel and A. Klumpp
  • Copper CVD precursors and processes for advanced metallization / P. Doppelt
  • Influence of carrier gas on Cu nucleation, film properties and MOCVD reaction kinetics / J. Rober, S. Riedel and S. E. Schulz
  • Deposition of barrier layer and CVD copper under no exposed wafer conditions adhesion performance and process integration / G. Braeckelmann, D. Manger and S. C. Seo
  • Low temperature dry etching of copper using a new chemical approach / Th. Kruck and M. Schober
  • Copper CMP evaluation slurry chemical effect on planarization / F. Romagna and M. Fayolle
  • ^
  • OMCVD TiN diffusion barrier for copper contact and via/interconnects structures / C. Marcadal, E. Richard and J. Torres
  • Thermal stress effects on capacitance and current characteristics of Cu/Si and Cu/TiN/Si Schottky diodes / C. Ahrens, R. Ferretti and G. Friese
  • Polymers for high performance interconnects / K. J. Taylor, S.-P. Jeng and M. Eissa
  • Integration of a stack of two fluorine doped silicon oxide thin films with interconnect metallization for a sub-0.35 [mu]m inter-metal dielectric applications / L. Baud, G. Passemard and Y. Gobil
  • Integration evaluation of low permittivity silicon based spin on materials as IMD / F. Pires, P. Noel and Ch. Lecornec
  • SiOf and SiO[subscript 2] deposition in a HDP reactor: tool characterization and film analysis / D. J. den Boer, H. Fukuda and J. B. C. van der Hilst
  • Cleaning after silicon oxide CMP / F. Tardif, I. Mansart and T. Lardin
  • Sub-half micron metallization using high pressure AL /
  • Dry etch challenges of 0.25 [mu]m dual damascene structures / R. F. Schnabel, D. Dobuzinski and F. Wang
  • Selective Ti/Si[subscript 2] by CVD, one step further / D. Maury and J. L. Regolini
  • Total Process of 0.18 and 0.25 [mu]m Ohmic contacts / T. Hara
  • Low temperature Al planarization by PVD AlGe / R. Joshi
  • Application of HF solutions for the cleaning of TiSi[subscript 2] surface / M. R. Baklanov, S. Vanhaelemeersch and K. Maex
  • Kinetics of the C49-C54 phase transition in TiSi[subscript 2] new indications from sheet resistance, infrared spectroscopy and molecular dynamics simulations / M. G. Grimaldi, F. La Via and S. Bocelli
  • self-aligned silicide technology with the Mo/Ti bilayer system / W. Kaplan, A. Mouroux and S. L. Zhang
  • Formation of ultra-thin PtSi layers with a 2-step silicidation process / R. A. Donaton, S. Jin and H. Bender
  • Arsenic solubility in single crystalline cobalt disilicide / D. Mangelinck, J. Cardenas and B. G. Svensson
  • R.F. magnetron sputtered WTi and WTi-N thin films as diffusion barriers between Cu and Si / H. Ramarotafika and G. Lemperiere
  • Titanium monophosphide (TIP) layers as diffusion barriers / R. Leuteneker, B. Froschle and P. Ramm
  • Ultra trace analysis and electrical characterization of Cu diffusion through thin quasi-amorphous Ta-N-O barriers / M. Stavrev, D. Fischer and C. Wenzel
  • TiN diffusion barriers for copper metallization / J. Baumann, T. Werner and M. Rennau
  • TiN/W double layers as a barrier system for use in Cu metallization / J. Baumann, M. Markert and T. Werner
  • Investigations of the interaction between different barrier metals and copper surface during the chemical-mechanical polishing / D. Zeldler, Z. Stavreva and M. Plotner
  • 3D simulation of sputter deposition of titanium layers in contact holes with high aspect ratios / E. Bar, J. Lorenz and H. Ryssel
  • Modification of Al-based metallization for improved surface morphology / M. Zaborowski and A. Barcz
  • Gap filling with high current pulsed arc evaporation: influence of deposition parameters / W. Klimes, C. Wenzel and P. Siemroth
  • Formation of Al3Ti during physical vapor deposition of titanium on aluminum / L. Ulmer, F. Pitard and D. Poncet
  • Reactive ion etching of metal stack consisting of an aluminium Alloy Wge[subscript x] barrier and Ti adhesion layer / E. Sabouret, P. F. M. Verhoeven and J. F. Jongste
  • Reduction of Molybdenum resistivity by a seed layer of Ti-W / S. Franssila, H. Kattelus and E. Nykanen
  • Deposition in thin TiN films by low-power reactive magnetron sputtering / P. V. Mikhal'chuk, A. A. Orlikovsky and A. G. Vasillev
  • Metal etcher characterization using flash memory cells as charge sensors / S. Alba, A. Cologenese and E. Ghio
  • Stress in copper films for interconnects / S. Riedel, J. Rober and S. E. Schulz
  • Influence of process parameters on chemical-mechanical polishing of copper / Z. Stavreva, D. Zeidler and M. Plotner
  • Influence of processing parameters on selectivity in a CVD-process of copper using Cu[superscript +1] (hfac)(TMVS) / G. Friese, A. Abdul-Hak and B. Schwierzi
  • Mechanism studies of Cu RIE for VLSI interconnections / M. Market, A. Bertz and T. Gessner
  • Chemical beam epitaxy of CoGa on GaAs using GaEt[subscript 3] and CpCo(CO)[subscript 2] as dual organometallic sources / N. Viguier and F. Maury
  • change of electrical properties of the aluminium-porous silicon contact by thermal annealing / S. P. Zimin and E. P. Komarov
  • Optimized indium oxide films prepared by DC magnetron sputtering / A. Axelvitch, E. Rabinovitch and G. Golan
  • Laser reinforcement of polytetrafluorethylene-metal adhesive joints / N. I. Tishkov, N. N. Fedosenko and S. A. Chizhik
  • Advances in the formation of C54-TiSi[subscript 2] with an interposed refractory metal layer: some properties / A. Mouroux, W. Kaplan and S. L. Zhang
  • High crystalline quality titanium silicides on n[superscript +]p and p[superscript +] n junctions by sputtering deposition of Ti/Si multilayers and annealing / P. Revva, A. Kastanas and A. G. Nassiopoulos
  • Characterization of thin TiSi[subscript 2] films by spectroscopic ellipsometry and thermal wave analysis / S. Kal, I. Kasko and H. Ryssel
  • Properties of tungsten silicide thin films obtained by magnetron sputtering of composite cast targets / V. G. Glebovsky, S. N. Ermolov and V. N. Motuzenko
  • Raman study of tungsten disilicide formation in thin films / O. Chaix-Pluchery, G. Lucazeau and F. Meyer
  • Investigation of chemical interactions on the interface W/Si(100) during the deposition of W thin films by various techniques / S. V. Pluscheva, L. G. Shabelnikov and I. V. Malikov
  • Some electronic properties of single crystalline NiSi / B. Meyer, O. Gottlieb and O. Laborde
  • Thermal stability of thin CoSi[subscript 2] layers on polysilicon implanted with As, BF[subscript 2] and Si / F. La Via, A. Alberti and V. Raineri
  • Epitaxial CoSi[subscript 2] formation by Co/Hf bilayers on Si (100) / B. Gebhardt, M. Falke and H. Giesler
  • Local nucleation and lateral crystallisation of the silicide phase in CoSi[subscript 2] buffer layer of YBCO/CoSi[subscript 2]/Si structure / J. Belousov, E. Rudenko and S. Linzen
  • EXAFS investigation of Co sites on CoSi[subscript 2] film grown by ion beam assisted deposition / A. Terrasi, F. La Via and F. D'Acapito
  • Reaction sequence of thin Ni films with (001) 3C-SiC / S. M. Gasser, A. Bachil and E. Kolowa
  • Formation of thin film of Co- and Ni Silicide by MEVVA implantation / Y. Zhang, H. J. Whitlow and T. Zhang
  • Size dependent phenomena during the formation of Gd and Fe silicide thin films / G. L. Molnar, G. Peto and Z. E. Horvath
  • Solid body reactions and barrier properties of thin films Ti-W on the silicon / Yu. N. Makogon, L. P. Maximovich and S. I. Sidorenko
  • Patterning of silicide layers by local oxidation / F. Klinkhammer, M. Dolle and S. Mantl
  • Solid solution disilicide thin films: formation, structure, properties and application / L. Dvorina
  • Band structure on transport properties of semiconducting rhenium silicide thin films grown epitaxially of silicon (111) / P. Muret, I. All and T. T. A. Nguyen
  • Lattice dynamics of transition metal disilicides / O. Chaix-Pluchery, J. Bossy and H. Schober
  • Optical properties of amorphous and crystalline FeSi[subscript 2], TaSi[subscript 2], MoSi[subscript 2] and CrSi[subscript 2] films / Yu. V. Kudryavtsev, M. V. Belous and Yu. N. Makogon
  • What is the metal role on Fermi-level position at the interface with IV-IV compounds? / V. Aubry-Fortuna, M. Mamor and F. Meyer
  • Sputter deposition and characterization of TiB[subscript 2]/TiSi[subscript 2] bilayer contact structure / G. Sade and J. Pelleg
  • TaSiN barrier layer for the oxygen diffusion / T. Hara, M. Tanaka and M. Tanaka
  • Computer-aided design of asymmetric stripline for multichip module applications / O. V. Klimchik and S. D. Lopatin
  • Zirconium diboride low resistance layers / A. F. Andreeva, V. M. Statsenko and L. A. Klotchkov.