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MAM '97, abstracts booklet : European Workshop: Materials for Advanced Metallization, Villard-de-Lans, France, March 16-19, 1997.

Bibliographic Details
Corporate Authors: European Workshop: Materials for Advanced Metallization Villard-de-Lans, France, International Union for Vacuum Science, Technique and Applications, France. Ministère de l'éducation nationale, de l'enseignement supérieur, de la recherche et de l'insertion professionnelle, IEEE Electron Devices Society
Format: Conference Proceeding Book
Language:English
Published: Paris, France : Société française du vide, 1997.
Subjects:
Integrated circuits > Very large scale integration > Design and construction > Congresses.
Metallizing > Congresses.
Semiconductor-metal boundaries > Congresses.
Métallisation > Congrès.
Contacts métal-semiconducteur > Congrès.
Integrated circuits > Very large scale integration > Design and construction.
Metallizing.
Semiconductor-metal boundaries.
Conference papers and proceedings.
Online Access:IEEE Xplore

MARC

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111 2 |a European Workshop: Materials for Advanced Metallization  |d (1997 :  |c Villard-de-Lans, France) 
245 1 0 |a MAM '97, abstracts booklet :  |b European Workshop: Materials for Advanced Metallization, Villard-de-Lans, France, March 16-19, 1997. 
246 1 7 |a Materials for advanced metallization 
260 |a Paris, France :  |b Société française du vide,  |c 1997. 
300 |a 221 pages :  |b illustrations ;  |c 24 cm 
336 |a text  |b txt  |2 rdacontent 
337 |a unmediated  |b n  |2 rdamedia 
338 |a volume  |b nc  |2 rdacarrier 
500 |a "With the sponsorship of IUVSTA (International Union for Vacuum Science, Technique and Applications), Ministère de l'éducation nationale, de l'enseignement supérieur et de la recherche, IEEE-EDS"--1st prelim. page. 
500 |a "Supplément à la revue no 283"--Cover. 
504 |a Includes bibliographical references and index. 
505 0 0 |t High aspect ration quarter-micron electroless copper integrated technology /  |r Y. Shacham-Diamand and S. Lopatin --  |t CVD process for copper interconnection /  |r C. Marcadal, E. Richard and J. Torres --  |t Copper metallization for advanced ULSI devices using spray electroless plating technology /  |r V. Nguyen --  |t Conformal copper deposition in deep trenches /  |r D. Bollmann, R. Merkel and A. Klumpp --  |t Copper CVD precursors and processes for advanced metallization /  |r P. Doppelt --  |t Influence of carrier gas on Cu nucleation, film properties and MOCVD reaction kinetics /  |r J. Rober, S. Riedel and S. E. Schulz --  |t Deposition of barrier layer and CVD copper under no exposed wafer conditions adhesion performance and process integration /  |r G. Braeckelmann, D. Manger and S. C. Seo --  |t Low temperature dry etching of copper using a new chemical approach /  |r Th. Kruck and M. Schober --  |t Copper CMP evaluation slurry chemical effect on planarization /  |r F. Romagna and M. Fayolle -- ^ 
505 8 0 |t OMCVD TiN diffusion barrier for copper contact and via/interconnects structures /  |r C. Marcadal, E. Richard and J. Torres --  |t Thermal stress effects on capacitance and current characteristics of Cu/Si and Cu/TiN/Si Schottky diodes /  |r C. Ahrens, R. Ferretti and G. Friese --  |t Polymers for high performance interconnects /  |r K. J. Taylor, S.-P. Jeng and M. Eissa --  |t Integration of a stack of two fluorine doped silicon oxide thin films with interconnect metallization for a sub-0.35 [mu]m inter-metal dielectric applications /  |r L. Baud, G. Passemard and Y. Gobil --  |t Integration evaluation of low permittivity silicon based spin on materials as IMD /  |r F. Pires, P. Noel and Ch. Lecornec --  |t SiOf and SiO[subscript 2] deposition in a HDP reactor: tool characterization and film analysis /  |r D. J. den Boer, H. Fukuda and J. B. C. van der Hilst --  |t Cleaning after silicon oxide CMP /  |r F. Tardif, I. Mansart and T. Lardin --  |t Sub-half micron metallization using high pressure AL / 
505 8 0 |t Dry etch challenges of 0.25 [mu]m dual damascene structures /  |r R. F. Schnabel, D. Dobuzinski and F. Wang --  |t Selective Ti/Si[subscript 2] by CVD, one step further /  |r D. Maury and J. L. Regolini --  |t Total Process of 0.18 and 0.25 [mu]m Ohmic contacts /  |r T. Hara --  |t Low temperature Al planarization by PVD AlGe /  |r R. Joshi --  |t Application of HF solutions for the cleaning of TiSi[subscript 2] surface /  |r M. R. Baklanov, S. Vanhaelemeersch and K. Maex --  |t Kinetics of the C49-C54 phase transition in TiSi[subscript 2] new indications from sheet resistance, infrared spectroscopy and molecular dynamics simulations /  |r M. G. Grimaldi, F. La Via and S. Bocelli --  |t self-aligned silicide technology with the Mo/Ti bilayer system /  |r W. Kaplan, A. Mouroux and S. L. Zhang --  |t Formation of ultra-thin PtSi layers with a 2-step silicidation process /  |r R. A. Donaton, S. Jin and H. Bender --  |t Arsenic solubility in single crystalline cobalt disilicide /  |r D. Mangelinck, J. Cardenas and B. G. Svensson --  |t R.F. magnetron sputtered WTi and WTi-N thin films as diffusion barriers between Cu and Si /  |r H. Ramarotafika and G. Lemperiere --  |t Titanium monophosphide (TIP) layers as diffusion barriers /  |r R. Leuteneker, B. Froschle and P. Ramm --  |t Ultra trace analysis and electrical characterization of Cu diffusion through thin quasi-amorphous Ta-N-O barriers /  |r M. Stavrev, D. Fischer and C. Wenzel --  |t TiN diffusion barriers for copper metallization /  |r J. Baumann, T. Werner and M. Rennau --  |t TiN/W double layers as a barrier system for use in Cu metallization /  |r J. Baumann, M. Markert and T. Werner --  |t Investigations of the interaction between different barrier metals and copper surface during the chemical-mechanical polishing /  |r D. Zeldler, Z. Stavreva and M. Plotner --  |t 3D simulation of sputter deposition of titanium layers in contact holes with high aspect ratios /  |r E. Bar, J. Lorenz and H. Ryssel 
505 8 0 |t Modification of Al-based metallization for improved surface morphology /  |r M. Zaborowski and A. Barcz --  |t Gap filling with high current pulsed arc evaporation: influence of deposition parameters /  |r W. Klimes, C. Wenzel and P. Siemroth --  |t Formation of Al3Ti during physical vapor deposition of titanium on aluminum /  |r L. Ulmer, F. Pitard and D. Poncet --  |t Reactive ion etching of metal stack consisting of an aluminium Alloy Wge[subscript x] barrier and Ti adhesion layer /  |r E. Sabouret, P. F. M. Verhoeven and J. F. Jongste --  |t Reduction of Molybdenum resistivity by a seed layer of Ti-W /  |r S. Franssila, H. Kattelus and E. Nykanen --  |t Deposition in thin TiN films by low-power reactive magnetron sputtering /  |r P. V. Mikhal'chuk, A. A. Orlikovsky and A. G. Vasillev --  |t Metal etcher characterization using flash memory cells as charge sensors /  |r S. Alba, A. Cologenese and E. Ghio --  |t Stress in copper films for interconnects /  |r S. Riedel, J. Rober and S. E. Schulz --  |t Influence of process parameters on chemical-mechanical polishing of copper /  |r Z. Stavreva, D. Zeidler and M. Plotner --  |t Influence of processing parameters on selectivity in a CVD-process of copper using Cu[superscript +1] (hfac)(TMVS) /  |r G. Friese, A. Abdul-Hak and B. Schwierzi --  |t Mechanism studies of Cu RIE for VLSI interconnections /  |r M. Market, A. Bertz and T. Gessner --  |t Chemical beam epitaxy of CoGa on GaAs using GaEt[subscript 3] and CpCo(CO)[subscript 2] as dual organometallic sources /  |r N. Viguier and F. Maury --  |t change of electrical properties of the aluminium-porous silicon contact by thermal annealing /  |r S. P. Zimin and E. P. Komarov --  |t Optimized indium oxide films prepared by DC magnetron sputtering /  |r A. Axelvitch, E. Rabinovitch and G. Golan --  |t Laser reinforcement of polytetrafluorethylene-metal adhesive joints /  |r N. I. Tishkov, N. N. Fedosenko and S. A. Chizhik 
505 8 0 |t Advances in the formation of C54-TiSi[subscript 2] with an interposed refractory metal layer: some properties /  |r A. Mouroux, W. Kaplan and S. L. Zhang --  |t High crystalline quality titanium silicides on n[superscript +]p and p[superscript +] n junctions by sputtering deposition of Ti/Si multilayers and annealing /  |r P. Revva, A. Kastanas and A. G. Nassiopoulos --  |t Characterization of thin TiSi[subscript 2] films by spectroscopic ellipsometry and thermal wave analysis /  |r S. Kal, I. Kasko and H. Ryssel --  |t Properties of tungsten silicide thin films obtained by magnetron sputtering of composite cast targets /  |r V. G. Glebovsky, S. N. Ermolov and V. N. Motuzenko --  |t Raman study of tungsten disilicide formation in thin films /  |r O. Chaix-Pluchery, G. Lucazeau and F. Meyer --  |t Investigation of chemical interactions on the interface W/Si(100) during the deposition of W thin films by various techniques /  |r S. V. Pluscheva, L. G. Shabelnikov and I. V. Malikov --  |t Some electronic properties of single crystalline NiSi /  |r B. Meyer, O. Gottlieb and O. Laborde --  |t Thermal stability of thin CoSi[subscript 2] layers on polysilicon implanted with As, BF[subscript 2] and Si /  |r F. La Via, A. Alberti and V. Raineri --  |t Epitaxial CoSi[subscript 2] formation by Co/Hf bilayers on Si (100) /  |r B. Gebhardt, M. Falke and H. Giesler --  |t Local nucleation and lateral crystallisation of the silicide phase in CoSi[subscript 2] buffer layer of YBCO/CoSi[subscript 2]/Si structure /  |r J. Belousov, E. Rudenko and S. Linzen --  |t EXAFS investigation of Co sites on CoSi[subscript 2] film grown by ion beam assisted deposition /  |r A. Terrasi, F. La Via and F. D'Acapito --  |t Reaction sequence of thin Ni films with (001) 3C-SiC /  |r S. M. Gasser, A. Bachil and E. Kolowa --  |t Formation of thin film of Co- and Ni Silicide by MEVVA implantation /  |r Y. Zhang, H. J. Whitlow and T. Zhang 
505 8 0 |t Size dependent phenomena during the formation of Gd and Fe silicide thin films /  |r G. L. Molnar, G. Peto and Z. E. Horvath --  |t Solid body reactions and barrier properties of thin films Ti-W on the silicon /  |r Yu. N. Makogon, L. P. Maximovich and S. I. Sidorenko --  |t Patterning of silicide layers by local oxidation /  |r F. Klinkhammer, M. Dolle and S. Mantl --  |t Solid solution disilicide thin films: formation, structure, properties and application /  |r L. Dvorina --  |t Band structure on transport properties of semiconducting rhenium silicide thin films grown epitaxially of silicon (111) /  |r P. Muret, I. All and T. T. A. Nguyen --  |t Lattice dynamics of transition metal disilicides /  |r O. Chaix-Pluchery, J. Bossy and H. Schober --  |t Optical properties of amorphous and crystalline FeSi[subscript 2], TaSi[subscript 2], MoSi[subscript 2] and CrSi[subscript 2] films /  |r Yu. V. Kudryavtsev, M. V. Belous and Yu. N. Makogon --  |t What is the metal role on Fermi-level position at the interface with IV-IV compounds? /  |r V. Aubry-Fortuna, M. Mamor and F. Meyer --  |t Sputter deposition and characterization of TiB[subscript 2]/TiSi[subscript 2] bilayer contact structure /  |r G. Sade and J. Pelleg --  |t TaSiN barrier layer for the oxygen diffusion /  |r T. Hara, M. Tanaka and M. Tanaka --  |t Computer-aided design of asymmetric stripline for multichip module applications /  |r O. V. Klimchik and S. D. Lopatin --  |t Zirconium diboride low resistance layers /  |r A. F. Andreeva, V. M. Statsenko and L. A. Klotchkov. 
650 0 |a Integrated circuits  |x Very large scale integration  |x Design and construction  |v Congresses. 
650 0 |a Metallizing  |v Congresses. 
650 0 |a Semiconductor-metal boundaries  |v Congresses. 
650 6 |a Métallisation  |v Congrès. 
650 6 |a Contacts métal-semiconducteur  |v Congrès. 
650 7 |a Integrated circuits  |x Very large scale integration  |x Design and construction.  |2 fast  |0 (OCoLC)fst00975610 
650 7 |a Metallizing.  |2 fast  |0 (OCoLC)fst01017914 
650 7 |a Semiconductor-metal boundaries.  |2 fast  |0 (OCoLC)fst01112197 
655 7 |a Conference papers and proceedings.  |2 fast  |0 (OCoLC)fst01423772 
710 2 |a International Union for Vacuum Science, Technique and Applications. 
710 1 |a France.  |b Ministère de l'éducation nationale, de l'enseignement supérieur, de la recherche et de l'insertion professionnelle. 
710 2 |a IEEE Electron Devices Society. 
776 0 8 |i Online version:  |a European Workshop: Materials for Advanced Metallization (1997 : Villard-de-Lans, France).  |t MAM '97, abstracts booklet.  |d Paris, France : Société française du vide, 1997  |w (OCoLC)645922869 
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