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mods:
  schema location: http://www.loc.gov/mods/v3 http://www.loc.gov/standards/mods/v3/mods-3-2.xsd
  title info:
    title: Ohmic contact metallizations to phosphrous based compound semiconductors by solid phase regrowth
  name:
    name part: Park, Moon Ho
    name part: 1959-
    role:
      role term: creator
  type of resource: text
  genre: bibliography
  origin info:
    place:
      place term: xx
    date issued: 1996
    issuance: monographic
  language:
    language term: eng
  physical description:
    form: print
    extent: xviii, 166 leaves : illustrations ; 28 cm.
  abstract: In this study, a new approach to form non-spiking and low
  abstract: contact resistivity contacts to p-InP, p-InGaAsP, and n-GaP
  abstract: will be investigated by utilizing solid phase regrowth
  abstract: principle to enhance the tunneling current across the
  abstract: barrier, thus resulting in ohmic contact behavior. P-type
  abstract: indium phosphide (InP) and its related compounds, such as
  abstract: InGaAsP and GaP have been widely used for the fabrication of
  abstract: modern high speed electronic and optoelectronic devices. Low
  abstract: resistance and reliable ohmic contacts are required for
  abstract: superior device performance. The most common approach to
  abstract: fabricate ohmic contacts to p-InP and its related compounds
  abstract: involves the use of Au-based metallizations, such as Au:Zn
  abstract: and Au:Be contacts. It is generally believed that Zn or Be
  abstract: dopes the surface region of the substrates during annealing,
  abstract: resulting in an enhancement of tunneling current which leads
  abstract: to an ohmic behavior. Although Au-based p-type contacts
  abstract: yield satisfactory contact resistivity, there are several
  abstract: inherent problems, i.e., poor reliability, non-uniform
  abstract: surface and spiking interface and deep protrusion of Au into
  abstract: the substrate. These spikes and deep protrusions can cause
  abstract: problems during device operations. Thus, significant effort
  abstract: has been expended for the development of low resistance,
  abstract: shallow and non-Au-based ohmic contacts to p-InP and its
  abstract: related compounds. The new approach involves solid-phase
  abstract: reactions which result in either a heavily doped surface
  abstract: layer or a heterojunction on the substrates. Conventional
  abstract: evaporation and lift-off processes can be readily used in
  abstract: this approach to define the contact areas. Thus, non-spiking
  abstract: ohmic contacts based on solid phase reactions appear to be
  abstract: the simplest and, perhaps, the most practical schemes for
  abstract: device applications. We have developed the low-resistance
  abstract: and thermally stable non-spiking ohmic contact schemes based
  abstract: on the solid phase regrowth principle: (i) the Ge/Pd/Zn/Pd,
  abstract: Pd/Sb/Zn/Pd, and Zn/Pd contacts, to p-InP (ii) the Si/Pd and
  abstract: Al/Si/Pd contacts to n-GaP, and (iii) the Si/Pd/Zn/Pd and
  abstract: Ge/Pd/Zn/Pd contacts to p-InGaAsP. Also in order to further
  abstract: reduce contact resistivity, other ohmic contact schemes such
  abstract: as Au/Pd/Zn/Pd and Pd/Zn/Pd contacts to p-InGaAsP were
  abstract: investigated. Abnormal lateral Zn diffusion for the annealed
  abstract: Pd/Zn/Pd contacts to p-InP was studied.
  note: by Moon Ho Park.
  note: Vita.
  note: "Major Subject: Electrical Engineers".
  note: Issued also on microfiche from University Microfilms Inc.
  note: Includes bibliographical references: pages 156-165.
  note: Ph. D. Texas A&M University 1996.
  subject:
    topic: Major electrical engineering
  identifier: 97-18432 UMI
  identifier: http://proxy.library.tamu.edu/login
  related item:
    location:
      url: http://proxy.library.tamu.edu/login
  record info:
    record content source: TXA
    record creation date: 970812
    record change date: 20190325093326.0
    record identifier: in00001379003