Transient fault modeling and fault injection simulation /

accepted double-exponential transient model. The

Bibliographic Details
Main Author: Yuan, Xuejun
Format: Thesis eBook
Language:English
Published: [Place of publication not identified] : [publisher not identified] ; 1996.
Subjects:
Online Access:Link to OAKTrust copy
Description
Summary:accepted double-exponential transient model. The
An accurate transient fault model is presented in this
chance of having a latch error. More importantly,
conduct electrical-level fault injection simulations on a
data. The model is implemented in a HSPICE simulation
derived from the results of a device-level, 3-dimensional,
different latch-error patterns are captured from the
environment as a current-injection source for fault
experimental data indicate that, for a given charge level,
is used to extract the numerical model from the empirical
microprocessors. The results from the 7-term exponential
model are compared with the results from the widely
simulation. The current transient model is used to
single-event-upset simulation. A curve-fitting algorithm
static RAM cell and subcircuits from two commercial
target circuits under the new fault model.
the 7-term exponential fault model results in a higher
thesis. A 7-term exponential current upset model is
Item Description:"Major subject: Electrical Engineering".
Vita.
Physical Description:xi, 86 leaves : illustrations ; 28 cm.
Also available online.
Issued also on microfiche from Lange Micrographics.
Bibliography:Includes bibliographical references: pages 63-65.