http://www.loc.gov/mods/v3 http://www.loc.gov/standards/mods/v3/mods-3-2.xsd
Transmission resonances in the bipolar quantum resonant tunneling transistor
viii, 68 leaves : illustrations ; 28 cm.
A propagator method is introduced for calculating the
and generalized methods are then applied to real world device
barrier. Models are presented to predict the base/collector
biases at which NDR resonances occur, and are compared to
BiQuaRTT is investigated. We present arguments as to why
bound state energies and wave functions of quantum wells.
detail. The quantum-mechanical origin of the negative
differential resistance (NDR) resonances observed in the
model cases and compared to analytical results. The original
nonpa,rabolic dispersion relation. Calculations are done for
potential profiles. In particular, the bipolar quantum
resonant tunneling transistor (BiQuaRTT) is considered in
these resonances occur even in the absence of an emitter/base
This method is then generalized to include the effects of a
transmission spectra of semiconductor nanostructures, and the
Issued also on microfiche from Lange Micrographics.
Includes bibliographical references: page 36.