Transmission resonances in the bipolar quantum resonant tunneling transistor /
A propagator method is introduced for calculating the
| Main Author: | |
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| Format: | Thesis eBook |
| Language: | English |
| Published: |
[Place of publication not identified] :
[publisher not identified] ;
1996.
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| Subjects: | |
| Online Access: | Link to OAKTrust copy |
| Summary: | A propagator method is introduced for calculating the and generalized methods are then applied to real world device barrier. Models are presented to predict the base/collector biases at which NDR resonances occur, and are compared to BiQuaRTT is investigated. We present arguments as to why bound state energies and wave functions of quantum wells. detail. The quantum-mechanical origin of the negative differential resistance (NDR) resonances observed in the model cases and compared to analytical results. The original nonpa,rabolic dispersion relation. Calculations are done for potential profiles. In particular, the bipolar quantum previous models. resonant tunneling transistor (BiQuaRTT) is considered in these resonances occur even in the absence of an emitter/base This method is then generalized to include the effects of a transmission spectra of semiconductor nanostructures, and the |
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| Item Description: | "Major subject: Physics". Vita. |
| Physical Description: | viii, 68 leaves : illustrations ; 28 cm. Also available online. Issued also on microfiche from Lange Micrographics. |
| Bibliography: | Includes bibliographical references: page 36. |