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Structure and dynamics of vacancies on GaAs(110) studied by scanning tunneling microscopy /

The properties of single-atom vacancies at As and Ga sites on the (II()) cleavage face of GaAs have been studied with the scanning tunneling microscope (STM). Ga vacancies are found on degenerate n-type (but not p-type) material, and are negatively charged, whereas As vacancies occur on degenerate...

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Bibliographic Details
Main Author: Lengel, George Alan, 1963-
Format: Thesis Book
Language:English
Published: [Place of publication not identified] : [publisher not identified] ; 1995.
Subjects:
Major physics.
Online Access:http://proxy.library.tamu.edu/login?url=http://proquest.umi.com/pqdweb?did=742744861&sid=1&Fmt=2&clientId=2945&RQT=309&VName=PQD

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