Field emission study of cobalt ion implanted porous silicon /
applications in flat panel display, and other high speed
| Main Author: | |
|---|---|
| Format: | Thesis eBook |
| Language: | English |
| Published: |
[Place of publication not identified] :
[publisher not identified] ;
1995.
|
| Subjects: | |
| Online Access: | Link to OAKTrust copy |
| Summary: | applications in flat panel display, and other high speed devices. electrical measurements. Successful extraction of field emission electrons into the vacuum suggested the formation, annealing behavior, and the oxidation of Co and Si implantation and energy scan implantation, a stable silicide microelectronics applications. By using low energy pore structure and field emission properties of the Porous silicon has become potentially important material for possibilities of vacuum microelectronics triodes, project, the formation of a CoSi2, conducting layer on porous silicon by high dose ion implantation while preserving the underlying porous silicon are reported. The cobalt silicide used as an electrode in field emission applications. In this were studied and characterized by RBS-Channeling analysis and with good electrical conductivity can be formed, and can be |
|---|---|
| Item Description: | "Major subject: Electrical Engineering". Vita. |
| Physical Description: | ix, 105 leaves : illustrations ; 28 cm. Also available online. Issued also on microfiche from Lange Micrographics. |
| Bibliography: | Includes bibliographical references. |