Electronic structure of the semimetals bismuth and antimony /
bands, (b) the electron and hole effective masses, and (c)
| Main Author: | |
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| Format: | Thesis eBook |
| Language: | English |
| Published: |
[Place of publication not identified] :
[publisher not identified] ;
1995.
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| Subjects: | |
| Online Access: | Link to OAKTrust copy |
| Summary: | bands, (b) the electron and hole effective masses, and (c) important in semimetal-semiconductor device structures, including (a) the small overlap of valence and conduction including superlattices and resonant tunneling devices. present tight-binding model is the first to treat these properties of Bi and Sb. This model successfully reproduces properties of proposed semimetal-semiconductor systems, semimetallic properties quantitatively, and it should spin-orbit coupling included, to treat the electronic the features near the Fermi surface that will be most the shapes of the electron and hole Fermi surfaces. The therefore be useful for calculations of the electronic We have developed a third-neighbor tight-binding model, with |
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| Item Description: | "Major subject: Physics". Vita. |
| Physical Description: | vii, 39 leaves : illustrations ; 28 cm. Also available online. Issued also on microfiche from Lange Micrographics. |
| Bibliography: | Includes bibliographical references. |