Chemical and electronic structure studies of refractory and dielectric thin films /
This study presents the synthesis and characterization of oxide and refractory thin films under varying conditions. The deposition of the thin films is performed under vacuum conditions. The characterization of the growth, as well as the chemical and electronic properties of the thin films was acco...
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| Format: | Thesis Book |
| Language: | English |
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[Place of publication not identified] :
[publisher not identified] ;
1994.
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| Subjects: | |
| Online Access: | http://proxy.library.tamu.edu/login?url=http://proquest.umi.com/pqdweb?did=741965091&sid=1&Fmt=2&clientId=2945&RQT=309&VName=PQD |
| Summary: | This study presents the synthesis and characterization of oxide and refractory thin films under varying conditions. The deposition of the thin films is performed under vacuum conditions. The characterization of the growth, as well as the chemical and electronic properties of the thin films was accomplished using a broad array of surface analytical techniques. These model studies describe the relationship between the preparative processes and the stoichiometry, structure and electronic properties of the film products. From these efforts, the optimal deposition conditions for the production of high quality films have been established. The thin film oxides synthesized and studied here include magnesium oxide, 'silicon oxide and iron oxide. These oxides were synthesized on a refractory substrate using both post oxidation of thin films as well as reactive vapor deposition of the metals in the presence of an oxygen background. Comparisons and contrasts are presented for the various systems. The adsorption of diborane on clean Ru(0001) and on surfaces precovered by ammonia was studied to lay the groundwork for the synthesis of boron nitride thin films. Boron-nitrogen adlayers were formed by exposin- B/Ru(0001) surfaces to ammonia or by coadsorbing ammonia and diborane at with subsequent annealing. Finally, the adsorption and pyrolysis of tetrakis-(dimethylamido)-titanium (TDMAT) on several metal surfaces was studied as a precursor to the synthesis of titanium nitride thin films. TDMAT was found to decompose on metallic substrates, producing films with high carbon content. However, in the presence of ammonia, the growth of low carbon-content titanium nitride films proceeds readily, via surface mediated reaction(s) of TDMAT and ammonia. The effects of surface temperature and reagent pressures are reported and discussed. |
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| Item Description: | Vita. "Major subject: Chemistry". |
| Physical Description: | xx, 241 leaves : illustrations ; 28 cm. Issued also on microfiche from University Microfilms Inc. |
| Bibliography: | Includes bibliographical references. |