http://www.loc.gov/mods/v3 http://www.loc.gov/standards/mods/v3/mods-3-2.xsd
Electrical characterization of germanium-silicon alloy
consisted of eight sets of peripheral metal contacts. The
der Pauw test structures were fabricated. The fabrication
electrically characterized using resistivity and Hall-
Ge-Si samples were compared. In the second part, the Hall-
mobility and carrier concentration of a representative
mobility measurements. The samples were obtained from a n-
no germanium. Prior to initiating the measurements, the van
oxide patterning, deposition of aluminum metal and metal
parts. In the first part, the resistivity of the silicon and
patterning. Each test structure was square-shaped and
performed using the van der Pauw technique. For comparison,
procedure involved sputter deposition of silicon dioxide,
results of the electrical measurements were divided into two
Samples of strained germanium-silicon (Ge-Si) alloy were
silicon and Ge-Si sample were each studied. The effect of
substrate using MBE. The electrical characterization was
temperature, sourcing current and testing configuration on
the measured electrical parameters were studied in each case.
the measurements were performed on control samples containing
type Ge-Si strained epi-layer which was grown on a ptype
"Major subject: Electrical Engineering".