Electrical characterization of germanium-silicon alloy /
consisted of eight sets of peripheral metal contacts. The
| Main Author: | |
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| Format: | Thesis eBook |
| Language: | English |
| Published: |
[Place of publication not identified] :
[publisher not identified] ;
1994.
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| Subjects: | |
| Online Access: | Link to OAKTrust copy |
| Summary: | consisted of eight sets of peripheral metal contacts. The der Pauw test structures were fabricated. The fabrication electrically characterized using resistivity and Hall- Ge-Si samples were compared. In the second part, the Hall- mobility and carrier concentration of a representative mobility measurements. The samples were obtained from a n- no germanium. Prior to initiating the measurements, the van oxide patterning, deposition of aluminum metal and metal parts. In the first part, the resistivity of the silicon and patterning. Each test structure was square-shaped and performed using the van der Pauw technique. For comparison, procedure involved sputter deposition of silicon dioxide, results of the electrical measurements were divided into two Samples of strained germanium-silicon (Ge-Si) alloy were silicon and Ge-Si sample were each studied. The effect of substrate using MBE. The electrical characterization was temperature, sourcing current and testing configuration on the measured electrical parameters were studied in each case. the measurements were performed on control samples containing type Ge-Si strained epi-layer which was grown on a ptype |
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| Item Description: | "Major subject: Electrical Engineering". Vita. |
| Physical Description: | vii, 48 leaves : illustrations ; 28 cm. Also available online. |
| Bibliography: | Includes bibliographical references. |