Surface phonons of III-V semiconductors /
agreement with inelastic helium scattering and high-
| Main Author: | |
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| Format: | Thesis eBook |
| Language: | English |
| Published: |
[Place of publication not identified] :
[publisher not identified] ;
1994.
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| Subjects: | |
| Online Access: | Link to OAKTrust copy |
| Summary: | agreement with inelastic helium scattering and high- because of the different surface geometries and the mass been surprisingly few experimental studies of their bulk acoustic and optical modes. The (110) surfaces of Ill-V closepacked metallic and ionic structures. There are some covalently-bonded structures of III-V semi-conductors lead to have been calculated for the (110) surfaces of nine Ill-V mismatch between cation and anion. novel surface phonon branches that are not seen in more parallels with SI(100) and Si(lll), but also differences resolution electron energy loss spectroscopy measurements. semiconductors are the simplest of all semiconductor semiconductors. The results for GaAs are in generally good states are rather well understood. There have, however, surfaces. Their atomic relaxations and electronic surface The surface phonon dispersion curves and polarization vectors theoretical interpretation. We find that the open, vibrational properties, and ours in the first detailed we predict a prominent optical branch, in the gap between We predict an additional acoustic branch along [ ]. For InP, |
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| Item Description: | "Major subject: Physics". In title, Roman numerals are used. Vita. |
| Physical Description: | viii, 83 leaves : illustrations ; 28 cm. Also available online. |
| Bibliography: | Includes bibliographical references. |