http://www.loc.gov/mods/v3 http://www.loc.gov/standards/mods/v3/mods-3-2.xsd
Beam induced recrystallization of amorphous silicon
Beam induced recrystallization of amorphous silicon layers which were produced by ion implantation of 1-μm-thick-<100>-Si films was performed using 130 keV argon at fluences ranging from 0.5x10^14 to 2.0x10^14 ions/cm^2 with incident fluxes ranging from approximately 0.5x10^14 to 1.5x10^14 ions/cm^2-sec. Rutherford backscattering and channeling analysis of lattice disorder was performed at protons energies of 130 keV and 180 keV using a surface barrier detector set at 160.0° with an energy resolution of approximately 2.6 keV at 130 keV. In the first series of experiments combined beam and oven annealing were studied for argon implanted amorphous layers of 600 Å thickness at oven temperatures of 75°C, 200°C, and 300°C and various annealing fluxes. In the second series of experiments dynamic annealing using the beam itself on arsenic implanted amorphous layers of 1400 Å thickness was investigated. It was found that complete annealing of the arsenic implanted layers could be obtained at a fluences of 1.0x10^14 ions/cm^2 which corresponds to a sample temperatures of approximately 400°C. This fluence is an order of magnitude lower than that required for complete recrystallization in previous work. Also, the growth front appears to be nonplanar and rather wide. A vacancy diffusion model was set up for the process based on which a representative diffusion coefficient was obtained for the process. In the case of combined beam and oven annealing it was found that higher oven temperatures and regrowth fluxes produced a better crystalline quality. A higher oven component produced a better crystalline quality for constant sample temperatures. Using single and multiple scattering approximations the damage distributions in amorphous and partially damaged layers were obtained.