A low temperature MOSFET modeling technique with VLSI technology /

Bibliographic Details
Main Author:	Yian, Li-Shian
Other Authors:	Ko, Che-Ming (degree committee member.), Sanchez, Edgar (degree committee member.), Singh, Chanan (degree committee member.)
Format:	Thesis Book
Language:	English
Published:	1988.
Subjects:	Integrated circuits > Very large scale integration. Metal oxide semiconductor field-effect transistors. Major electrical engineering. Academic theses
Online Access:	Link to OAKTrust copy

Description
Abstract:	It has been found that CMOS technology can achieve low temperature operation. While the mechanisms behind the MOSFETs are understood, little attention has been given to modeling for the purpose of simulation. This research has attempted to develop models for the simulator program SPICE2 which are good for temperatures down to 4.2 K. The models include the simulation of the KINK effect for NMOS at less than 30 K and the temperature V[GS], V[DS] dependences of λ for both PMOS and NMOS. A model has been further developed to achieve a better low temperature simulation. The methods of parameter extraction for the SPICE Level-1 model are discussed. A curve fitting technique has been used in the temperature dependent modeling of parameters K[P] and λ. A model with 5% accuracy for K[P] over the range of 4.2 K - 300 K has been obtained. Finally, the experimental curves of PMOS, NMOS, CMOS switch, CMOS inverter have been compared with the simulation results. It is demonstrated that reasonably good comparison between experimental and simulated results has been obtained among these devices and simple circuits at temperatures down to 4.2 K.
Item Description:	Typescript (photocopy). Vita. "Major subject: Electrical Engineering."
Physical Description:	xiii, 145 leaves : illustrations ; 29 cm
Bibliography:	Includes bibliographical references.