NATO Advanced Study Institute on Cohesive Properties of Semiconductors under Laser Irradiation Cargèse, France, North Atlantic Treaty Organization. Scientific Affairs Division, & Laude, L. D. (1983). Cohesive properties of semiconductors under laser irradiation. M. Nijhoff.
Chicago Style (17th ed.) CitationNATO Advanced Study Institute on Cohesive Properties of Semiconductors under Laser Irradiation Cargèse, France, North Atlantic Treaty Organization. Scientific Affairs Division, and Lucien D. Laude. Cohesive Properties of Semiconductors Under Laser Irradiation. The Hague ; Boston: M. Nijhoff, 1983.
MLA (9th ed.) CitationNATO Advanced Study Institute on Cohesive Properties of Semiconductors under Laser Irradiation Cargèse, France, et al. Cohesive Properties of Semiconductors Under Laser Irradiation. M. Nijhoff, 1983.