http://www.loc.gov/mods/v3 http://www.loc.gov/standards/mods/v3/mods-3-2.xsd
Some electron transport properties of two wide bandgap semiconductors, gallium phosphide and indium gallium phosphide
Electron transport in gallium phosphide epilayers and indium gallium phosphide epilayers lattice matched to GaAs has been studied. The epilayers were grown using LPE with a graphite slider boat in a palladium diffused hydrogen atmosphere. The gallium phosphide electron v-E characteristic was measured using a novel variation on the conductivity technique. The resulting curves were fit using a nonlinear least squares method to two empirical models commonly used for silicon. The resulting drift mobility, ~ 85 cm^2/v - s, is half the measured Hall mobility. The resulting saturated drift velocity, ~ 1.3 x 10^7 cm/sec, is consistent with predictions and is substantially higher than for narrower bandgap III-V compounds. In addition the electron Hall mobility has been measured in indium gallium phosphide layers lattice matched to gallium arsenide. The resulting Hall mobilities, ~ 1000 cm^2/v - s, are approximately an order of magnitude greater than for gallium phosphide.
"Major subject: Electrical Engineering."
Includes bibliographical references (leaves 100-103).