rdf-syntax-grammar
mods:
  schema location: http://www.loc.gov/mods/v3 http://www.loc.gov/standards/mods/v3/mods-3-2.xsd
  title info:
    title: Some electron transport properties of two wide bandgap semiconductors, gallium phosphide and indium gallium phosphide
  name:
    name part: Johnson, Ralph Herbert
    name part: 1958-
    role:
      role term: creator
  name:
    name part: Anjaneyulu, Y.
    role:
      role term: degree committee member.
  name:
    name part: Green, P. J.
    role:
      role term: degree committee member.
  name:
    name part: Parker, Donald L.
    role:
      role term: degree supervisor.
  name:
    name part: Strader, N. R.
    role:
      role term: degree committee member.
  name:
    name part: Texas A & M University
    role:
      role term: degree granting institution.
  type of resource: text
  genre: bibliography
  genre: Academic theses
  origin info:
    place:
      place term: xx
    date issued: 1985
    issuance: monographic
  language:
    language term: eng
  physical description:
    form: print
    extent: xi, 116 leaves : illustrations ; 29 cm
  abstract: Electron transport in gallium phosphide epilayers and indium gallium phosphide epilayers lattice matched to GaAs has been studied. The epilayers were grown using LPE with a graphite slider boat in a palladium diffused hydrogen atmosphere. The gallium phosphide electron v-E characteristic was measured using a novel variation on the conductivity technique. The resulting curves were fit using a nonlinear least squares method to two empirical models commonly used for silicon. The resulting drift mobility, ~ 85 cm^2/v - s, is half the measured Hall mobility. The resulting saturated drift velocity, ~ 1.3 x 10^7 cm/sec, is consistent with predictions and is substantially higher than for narrower bandgap III-V compounds. In addition the electron Hall mobility has been measured in indium gallium phosphide layers lattice matched to gallium arsenide. The resulting Hall mobilities, ~ 1000 cm^2/v - s, are approximately an order of magnitude greater than for gallium phosphide.
  note: "Major subject: Electrical Engineering."
  note: Typescript (photocopy).
  note: Vita.
  note: Ph. D. Texas A & M University 1985
  note: Includes bibliographical references (leaves 100-103).
  subject:
    topic: Electron transport
  subject:
    topic: Semiconductors
    topic: Testing
  subject:
    topic: Major electrical engineering
  identifier: http://proxy.library.tamu.edu/login
  identifier: https://hdl.handle.net/1969.1/DISSERTATIONS-434716
  related item:
    location:
      url: http://proxy.library.tamu.edu/login
  related item:
    location:
      url: https://hdl.handle.net/1969.1/DISSERTATIONS-434716
  record info:
    record content source: TXA
    record creation date: 861126
    record change date: 20220104090311.0
    record identifier: in00000416808
    language of cataloging:
      language term: eng