Some electron transport properties of two wide bandgap semiconductors, gallium phosphide and indium gallium phosphide /
| Main Author: | |
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| Other Authors: | , , |
| Format: | Thesis Book |
| Language: | English |
| Published: |
1985.
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| Subjects: | |
| Online Access: | Link to ProQuest copy Link to OAKTrust copy |
| Abstract: | Electron transport in gallium phosphide epilayers and indium gallium phosphide epilayers lattice matched to GaAs has been studied. The epilayers were grown using LPE with a graphite slider boat in a palladium diffused hydrogen atmosphere. The gallium phosphide electron v-E characteristic was measured using a novel variation on the conductivity technique. The resulting curves were fit using a nonlinear least squares method to two empirical models commonly used for silicon. The resulting drift mobility, ~ 85 cm^2/v - s, is half the measured Hall mobility. The resulting saturated drift velocity, ~ 1.3 x 10^7 cm/sec, is consistent with predictions and is substantially higher than for narrower bandgap III-V compounds. In addition the electron Hall mobility has been measured in indium gallium phosphide layers lattice matched to gallium arsenide. The resulting Hall mobilities, ~ 1000 cm^2/v - s, are approximately an order of magnitude greater than for gallium phosphide. |
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| Item Description: | "Major subject: Electrical Engineering." Typescript (photocopy). Vita. |
| Physical Description: | xi, 116 leaves : illustrations ; 29 cm |
| Bibliography: | Includes bibliographical references (leaves 100-103). |