A phenomenological study of the parametric interrelationships of the inverse bipolar transistor /
| Main Author: | |
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| Other Authors: | , , |
| Format: | Thesis Book |
| Language: | English |
| Published: |
[College Station, Tex.] :
Plunkett,
1978.
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| Subjects: | |
| Online Access: | Link to ProQuest copy Link to OAKTrust copy |
| Abstract: | A theoretical and experimental study of the interrelationships among several fabrication and design parameters of the bipolar transistor in the inverse mode is presented, with an emphasis toward its improvement for use in integrated injection logic. The effect of recombination in the external base and epitaxial regions on the inverse current gain and related parameters is shown. It is found that the inverse current gain increases with decrease in recombination in the external base region by the introduction of a new double-base process. Improvement of the inverse gain is also shown with a decrease in epitaxial layer thickness until the thickness reaches a point of diminishing returns at about one micrometer width between the space charge regions. Breakdown phenomena related to the external base depth and the epitaxial layer thickness are also discussed. The fabrication process for the double-base diffusion is presented in detail. The relationship of the base impurity profile to the performance of the inverse bipolar transistor is discussed. An experimental and numerical technique is presented for the measurement of the base impurity profile. A computer algorithm is described which simplifies the conversion of sheet resistance to impurity profile as required by the anodization and stripping technique. Error magnification commonly found in discrete data differentiation is avoided. Empirical mobility versus carrier concentration expressions are derived from several sources, and a self-contained computer algorithm is given which allows for data reduction on commonly available minicomputers using Fortran. A computer program listing is provided. |
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| Item Description: | "Major subject: Electrical Engineering." Vita. |
| Physical Description: | x, 127 leaves : illustrations, graphs ; 28 cm |
| Bibliography: | Includes bibliographical references (leaves 101-104). |